NXP USA Inc. BAP50-03,115
- Part Number:
- BAP50-03,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2438176-BAP50-03,115
- Description:
- DIODE PIN GP 50V 50MA SOD-323
- Datasheet:
- BAP50-03,115
NXP USA Inc. BAP50-03,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BAP50-03,115.
- Factory Lead Time8 Weeks
- Package / CaseSC-76, SOD-323
- Surface MountYES
- Diode Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1999
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTin (Sn)
- HTS Code8541.10.00.70
- SubcategoryPIN Diodes
- TechnologyPOSITIVE-INTRINSIC-NEGATIVE
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBAP50
- Pin Count2
- JESD-30 CodeR-PDSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max500mW
- Diode TypePIN - Single
- Current - Max50mA
- Capacitance @ Vr, F0.35pF @ 5V 1MHz
- Voltage - Peak Reverse (Max)50V
- Breakdown Voltage-Min50V
- Reverse Test Voltage1V
- Diode Capacitance-Nom0.55pF
- Resistance @ If, F5Ohm @ 10mA 100MHz
- Diode Capacitance-Max0.55pF
- Diode Res Test Current0.5mA
- Diode Res Test Frequency100MHz
- Diode Forward Resistance-Max5Ohm
- RoHS StatusROHS3 Compliant
BAP50-03,115 Overview
Operating from 50mA is the maximum current for this device.The maximum peak reverse voltage for this device is 50V, according to the applicable device specifications.There may be times when this device runs at its lowest possible breakdown voltage, which is 50V.Valid conversion results require a reverse test voltage within 1V.
BAP50-03,115 Features
from a maximum current of 50mA volts
at its lowest breakdown voltage of 50V
BAP50-03,115 Applications
There are a lot of NXP USA Inc.
BAP50-03,115 applications of RF diodes.
Radar systems for industrial use
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Operating from 50mA is the maximum current for this device.The maximum peak reverse voltage for this device is 50V, according to the applicable device specifications.There may be times when this device runs at its lowest possible breakdown voltage, which is 50V.Valid conversion results require a reverse test voltage within 1V.
BAP50-03,115 Features
from a maximum current of 50mA volts
at its lowest breakdown voltage of 50V
BAP50-03,115 Applications
There are a lot of NXP USA Inc.
BAP50-03,115 applications of RF diodes.
Radar systems for industrial use
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
BAP50-03,115 More Descriptions
BAP50-03 Series 50 mA Single Surface Mount PIN Diode - SOD-323
Diode PIN 50V 50mA 2-Pin SOD-323 T/R
Diode, PIN, Ct=0.3 pF @ 1 V, SOD-323, Single,
Diode PIN 50 Volt 2-Pin SOD-323
Silicon PIN diode, SOD323, RoHSNXP Semiconductors SCT
French Electronic Distributor since 1988
STANDARD MARKING * REEL PACK, SMD, 7'
Rf Diode; Diode Configuration:Single; Resistance @ If:3Ohm; Reverse Voltage:50V; Diode Case Style:Sod-323; No. Of Pins:2 Pin; Diode Capacitance:0.35Pf; Forward Current:-; Operating Temperature Max:125°C; Forward Voltage:1.1V Rohs Compliant: Yes |Nxp BAP50-03,115
Diode PIN 50V 50mA 2-Pin SOD-323 T/R
Diode, PIN, Ct=0.3 pF @ 1 V, SOD-323, Single,
Diode PIN 50 Volt 2-Pin SOD-323
Silicon PIN diode, SOD323, RoHSNXP Semiconductors SCT
French Electronic Distributor since 1988
STANDARD MARKING * REEL PACK, SMD, 7'
Rf Diode; Diode Configuration:Single; Resistance @ If:3Ohm; Reverse Voltage:50V; Diode Case Style:Sod-323; No. Of Pins:2 Pin; Diode Capacitance:0.35Pf; Forward Current:-; Operating Temperature Max:125°C; Forward Voltage:1.1V Rohs Compliant: Yes |Nxp BAP50-03,115
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