Microsemi Corporation APTGV75H60T3G
- Part Number:
- APTGV75H60T3G
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2854410-APTGV75H60T3G
- Description:
- IGBT NPT BST CHOP FULL BRDG SP3
- Datasheet:
- APTGV75H60T3G
Microsemi Corporation APTGV75H60T3G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGV75H60T3G.
- MountChassis Mount, Screw
- Mounting TypeChassis Mount
- Package / CaseSP3
- Number of Pins32
- Published2007
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations25
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation250W
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Pin Count25
- JESD-30 CodeR-XUFM-X25
- Number of Elements4
- ConfigurationFull Bridge Inverter
- Case ConnectionISOLATED
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current100A
- Current - Collector Cutoff (Max)250μA
- Collector Emitter Breakdown Voltage600V
- Input Capacitance4.62nF
- Turn On Time170 ns
- Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 75A
- Turn Off Time-Nom (toff)310 ns
- IGBT TypeNPT, Trench Field Stop
- NTC ThermistorYes
- Gate-Emitter Voltage-Max20V
- Input Capacitance (Cies) @ Vce4.62nF @ 25V
- VCEsat-Max1.9 V
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
APTGV75H60T3G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGV75H60T3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGV75H60T3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGV75H60T3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGV75H60T3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APTGV75H60T3G More Descriptions
Trans IGBT Module N-CH 600V 100A/100A/84A/84A 32-Pin Case SP3
IGBT NPT BST CHOP FULL BRDG SP3
IGBT MODULE 600V 100A 250W SP3
IGBT NPT BST CHOP FULL BRDG SP3
IGBT MODULE 600V 100A 250W SP3
The three parts on the right have similar specifications to APTGV75H60T3G.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryMax Power DissipationTerminal PositionTerminal FormPin CountJESD-30 CodeNumber of ElementsConfigurationCase ConnectionPolarity/Channel TypeInputCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageInput CapacitanceTurn On TimeVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeNTC ThermistorGate-Emitter Voltage-MaxInput Capacitance (Cies) @ VceVCEsat-MaxRadiation HardeningRoHS StatusPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusElement ConfigurationTransistor ApplicationVoltage - Collector Emitter Breakdown (Max)View Compare
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APTGV75H60T3GChassis Mount, ScrewChassis MountSP3322007e1yesObsolete1 (Unlimited)25EAR99TIN SILVER COPPER150°C-40°CInsulated Gate BIP Transistors250WUPPERUNSPECIFIED25R-XUFM-X254Full Bridge InverterISOLATEDN-CHANNELStandard600V100A250μA600V4.62nF170 ns1.9V @ 15V, 75A310 nsNPT, Trench Field StopYes20V4.62nF @ 25V1.9 VNoRoHS Compliant-------
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Chassis Mount, ScrewChassis MountSP3182009--Obsolete1 (Unlimited)9EAR99-150°C-40°CInsulated Gate BIP Transistors961WUPPERUNSPECIFIED25R-XUFM-X92Half BridgeISOLATEDN-CHANNELStandard1.2kV210A250μA1.2kV9.3nF190 ns3.7V @ 15V, 150A390 nsNPTYes20V9.3nF @ 25V3.7 V-RoHS CompliantNOT SPECIFIEDNOT SPECIFIEDNot QualifiedDualPOWER CONTROL1200V
-
Chassis Mount, ScrewChassis MountSP1122012--Obsolete1 (Unlimited)-EAR99-150°C-40°CInsulated Gate BIP Transistors140W----1Three Level Inverter--Standard600V42A250μA600V1.35nF-2.45V @ 15V, 30A-NPTNo20V1.35nF @ 25V2.45 V-RoHS Compliant------
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Chassis Mount, ScrewChassis MountSP2182012--Obsolete1 (Unlimited)-EAR99-150°C-40°CInsulated Gate BIP Transistors568W----1Half Bridge--Standard1.2kV135A250μA1.2kV6.5nF-3.7V @ 15V, 100A-NPTNo20V6.5nF @ 25V3.7 V-RoHS Compliant---Dual-1200V
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