Microsemi Corporation APTGV15H120T3G

Name: APTGV15H120T3G
Brand: Microsemi Corporation
SKU: 2854335-APTGV15H120T3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGV15H120T3G

Manufacturer:: Microsemi Corporation

Ventron No:: 2854335-APTGV15H120T3G

Description:: IGBT NPT BST CHOP FULL BRDG SP3

ECAD Model:

Datasheet:: APTGV15H120T3G

Specifications

Microsemi Corporation APTGV15H120T3G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGV15H120T3G.

Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
SP3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Published
2007
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
25
Terminal Finish
TIN SILVER COPPER
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
115W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
25
JESD-30 Code
R-XUFM-X25
Qualification Status
Not Qualified
Number of Elements
4
Configuration
Full Bridge Inverter
Case Connection
ISOLATED
Power - Max
115W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
25A
Current - Collector Cutoff (Max)
250μA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
1.1nF
Turn On Time
120 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 15A
Turn Off Time-Nom (toff)
640 ns
IGBT Type
NPT, Trench Field Stop
NTC Thermistor
Yes
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
1.1nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGV15H120T3G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGV15H120T3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGV15H120T3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGV15H120T3G More Descriptions

Trans IGBT Module N-CH 1.2KV 25A 32-Pin Case SP-3
IGBT NPT BST CHOP FULL BRDG SP3
IGBT MODULE 1200V 25A 115W SP3

Product Comparison

The three parts on the right have similar specifications to APTGV15H120T3G.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Case Connection

Power - Max

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Gate-Emitter Voltage-Max

Input Capacitance (Cies) @ Vce

RoHS Status

ECCN Code

Max Operating Temperature

Min Operating Temperature

Element Configuration

Transistor Application

VCEsat-Max

Radiation Hardening

Lead Free

Pbfree Code

View Compare
APTGV15H120T3G

Microsemi Corporation

Chassis Mount

Chassis Mount

SP3

3

SILICON

-40°C~150°C TJ

2007

e1

Obsolete

1 (Unlimited)

25

TIN SILVER COPPER

Insulated Gate BIP Transistors

115W

UPPER

UNSPECIFIED

NOT SPECIFIED

unknown

NOT SPECIFIED

25

R-XUFM-X25

Not Qualified

4

Full Bridge Inverter

ISOLATED

115W

N-CHANNEL

Standard

2.1V

25A

250μA

1.2kV

1200V

1.1nF

120 ns

2.1V @ 15V, 15A

640 ns

NPT, Trench Field Stop

Yes

20V

1.1nF @ 25V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-
APTGF150A120T3AG

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP3

20

-

-

-

-

Obsolete

1 (Unlimited)

10

-

Insulated Gate BIP Transistors

1.041kW

UPPER

UNSPECIFIED

-

-

-

25

R-XUFM-X10

-

2

Half Bridge

ISOLATED

1041W

N-CHANNEL

Standard

1.2kV

210A

250μA

1.2kV

1200V

9.3nF

190 ns

3.7V @ 15V, 150A

390 ns

NPT

Yes

-

9.3nF @ 25V

RoHS Compliant

EAR99

150°C

-40°C

Dual

POWER CONTROL

3.7 V

No

Lead Free

-

APTGV15H120T3G vs APTGF150A120T3AG
APTGF350DU60G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP6

7

-

-

2012

e1

Obsolete

1 (Unlimited)

7

TIN SILVER COPPER

Insulated Gate BIP Transistors

1.562kW

UPPER

UNSPECIFIED

-

-

-

7

-

-

2

Dual, Common Source

ISOLATED

1562W

N-CHANNEL

Standard

600V

430A

200μA

600V

-

17.2nF

51 ns

2.5V @ 15V, 360A

210 ns

NPT

No

20V

17.2nF @ 25V

RoHS Compliant

EAR99

150°C

-40°C

Dual

POWER CONTROL

2.5 V

-

-

yes

APTGV15H120T3G vs APTGF350DU60G
APTGF30TL601G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP1

12

-

-

2012

-

Obsolete

1 (Unlimited)

-

-

Insulated Gate BIP Transistors

140W

-

-

-

-

-

-

-

-

1

Three Level Inverter

-

-

-

Standard

600V

42A

250μA

600V

-

1.35nF

-

2.45V @ 15V, 30A

-

NPT

No

20V

1.35nF @ 25V

RoHS Compliant

EAR99

150°C

-40°C

-

-

2.45 V

-

-

-

APTGV15H120T3G vs APTGF30TL601G