Microsemi Corporation APTGT75DH120T3G

Name: APTGT75DH120T3G
Brand: Microsemi Corporation
SKU: 2493433-APTGT75DH120T3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT75DH120T3G

Manufacturer:: Microsemi Corporation

Ventron No:: 2493433-APTGT75DH120T3G

Description:: MOD IGBT 1200V 110A SP3

ECAD Model:

Datasheet:: APTGT75DH120T3G

Specifications

Microsemi Corporation APTGT75DH120T3G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT75DH120T3G.

Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time
36 Weeks
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SP3
Number of Pins
16
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
11
ECCN Code
EAR99
Max Power Dissipation
357W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
25
JESD-30 Code
R-XUFM-X11
Qualification Status
Not Qualified
Number of Elements
2
Configuration
Asymmetrical Bridge
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
357W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
110A
Current - Collector Cutoff (Max)
250μA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
5.34nF
Turn On Time
335 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 75A
Turn Off Time-Nom (toff)
610 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
5.34nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGT75DH120T3G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT75DH120T3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT75DH120T3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT75DH120T3G More Descriptions

Pm-Igbt-Tfs-Sp3F Sp3F Tube Rohs Compliant: Yes |Microchip APTGT75DH120T3G
Trans IGBT Module N-CH 1.2KV 110A 16-Pin Case SP-3
High Voltage Power Module, Asymmetrical bridge, 1200V, RoHSMicrochip SCT
IGBT MODULE 1200V 110A 357W SP3

Product Comparison

The three parts on the right have similar specifications to APTGT75DH120T3G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Element Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Input Capacitance (Cies) @ Vce

RoHS Status

JESD-609 Code

Pbfree Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Subcategory

Gate-Emitter Voltage-Max

VCEsat-Max

Radiation Hardening

Lead Free

View Compare
APTGT75DH120T3G

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

36 Weeks

Chassis Mount, Screw

Chassis Mount

SP3

16

SILICON

-40°C~150°C TJ

2012

Active

1 (Unlimited)

11

EAR99

357W

UPPER

UNSPECIFIED

NOT SPECIFIED

NOT SPECIFIED

25

R-XUFM-X11

Not Qualified

2

Asymmetrical Bridge

Dual

ISOLATED

357W

POWER CONTROL

N-CHANNEL

Standard

1.2kV

110A

250μA

1.2kV

1200V

5.34nF

335 ns

2.1V @ 15V, 75A

610 ns

Trench Field Stop

Yes

5.34nF @ 25V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-
APTGF25H120T1G

Microsemi Corporation

-

-

Chassis Mount, Screw

Chassis Mount

SP1

12

-

-

2007

Obsolete

1 (Unlimited)

12

EAR99

208W

UPPER

UNSPECIFIED

-

-

12

-

-

4

Full Bridge Inverter

-

ISOLATED

-

MOTOR CONTROL

N-CHANNEL

Standard

1.2kV

40A

250μA

1.2kV

1200V

1.65nF

110 ns

3.7V @ 15V, 25A

386 ns

NPT

Yes

1.65nF @ 25V

RoHS Compliant

e1

yes

TIN SILVER COPPER

150°C

-40°C

Insulated Gate BIP Transistors

20V

3.7 V

No

Lead Free

APTGT75DH120T3G vs APTGF25H120T1G
APTGF25H120T3G

Microsemi Corporation

-

-

Chassis Mount, Screw

Chassis Mount

SP3

32

-

-

2012

Obsolete

1 (Unlimited)

25

EAR99

208W

UPPER

UNSPECIFIED

NOT SPECIFIED

NOT SPECIFIED

25

R-XUFM-X25

Not Qualified

4

Full Bridge Inverter

-

ISOLATED

-

MOTOR CONTROL

N-CHANNEL

Standard

1.2kV

40A

250μA

1.2kV

1200V

1.65nF

110 ns

3.7V @ 15V, 25A

386 ns

NPT

Yes

1.65nF @ 25V

RoHS Compliant

e1

yes

TIN SILVER COPPER

150°C

-40°C

Insulated Gate BIP Transistors

20V

3.7 V

-

-

APTGT75DH120T3G vs APTGF25H120T3G
APTGF30TL601G

Microsemi Corporation

-

-

Chassis Mount, Screw

Chassis Mount

SP1

12

-

-

2012

Obsolete

1 (Unlimited)

-

EAR99

140W

-

-

-

-

-

-

-

1

Three Level Inverter

-

-

-

-

-

Standard

600V

42A

250μA

600V

-

1.35nF

-

2.45V @ 15V, 30A

-

NPT

No

1.35nF @ 25V

RoHS Compliant

-

-

-

150°C

-40°C

Insulated Gate BIP Transistors

20V

2.45 V

-

-

APTGT75DH120T3G vs APTGF30TL601G