Microsemi Corporation APTGT75A1202G

Name: APTGT75A1202G
Brand: Microsemi Corporation
SKU: 3587063-APTGT75A1202G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT75A1202G

Manufacturer:: Microsemi Corporation

Ventron No:: 3587063-APTGT75A1202G

Description:: MOD IGBT 1200V 110A SP2

ECAD Model:

Datasheet:: APTGT75A1202G

Specifications

Microsemi Corporation APTGT75A1202G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT75A1202G.

Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SP2
Number of Pins
18
Operating Temperature
-40°C~150°C TJ
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
357W
Configuration
Half Bridge
Element Configuration
Dual
Power - Max
357W
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
110A
Current - Collector Cutoff (Max)
50μA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
5.34nF
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 75A
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
5.34nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGT75A1202G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT75A1202G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT75A1202G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT75A1202G More Descriptions

Trans IGBT Module N-CH 1.2KV 110A 18-Pin Case SP-2
IGBT MODULE 1200V 110A 357W SP2

Product Comparison

The three parts on the right have similar specifications to APTGT75A1202G.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Max Power Dissipation

Configuration

Element Configuration

Power - Max

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Input Capacitance

Vce(on) (Max) @ Vge, Ic

IGBT Type

NTC Thermistor

Input Capacitance (Cies) @ Vce

RoHS Status

Published

Number of Terminations

Max Operating Temperature

Min Operating Temperature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Case Connection

Transistor Application

Polarity/Channel Type

Turn On Time

Turn Off Time-Nom (toff)

Gate-Emitter Voltage-Max

VCEsat-Max

JESD-609 Code

Pbfree Code

Terminal Finish

View Compare
APTGT75A1202G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP2

18

-40°C~150°C TJ

Obsolete

1 (Unlimited)

EAR99

357W

Half Bridge

Dual

357W

Standard

1.2kV

110A

50μA

1.2kV

1200V

5.34nF

2.1V @ 15V, 75A

Trench Field Stop

No

5.34nF @ 25V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
APTGF150A120T3WG

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP3

18

-

Obsolete

1 (Unlimited)

EAR99

961W

Half Bridge

Dual

-

Standard

1.2kV

210A

250μA

1.2kV

1200V

9.3nF

3.7V @ 15V, 150A

NPT

Yes

9.3nF @ 25V

RoHS Compliant

2009

9

150°C

-40°C

Insulated Gate BIP Transistors

UPPER

UNSPECIFIED

NOT SPECIFIED

NOT SPECIFIED

25

R-XUFM-X9

Not Qualified

2

ISOLATED

POWER CONTROL

N-CHANNEL

190 ns

390 ns

20V

3.7 V

-

-

-

APTGT75A1202G vs APTGF150A120T3WG
APTGF350DU60G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP6

7

-

Obsolete

1 (Unlimited)

EAR99

1.562kW

Dual, Common Source

Dual

1562W

Standard

600V

430A

200μA

600V

-

17.2nF

2.5V @ 15V, 360A

NPT

No

17.2nF @ 25V

RoHS Compliant

2012

7

150°C

-40°C

Insulated Gate BIP Transistors

UPPER

UNSPECIFIED

-

-

7

-

-

2

ISOLATED

POWER CONTROL

N-CHANNEL

51 ns

210 ns

20V

2.5 V

e1

yes

TIN SILVER COPPER

APTGT75A1202G vs APTGF350DU60G
APTGF30TL601G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP1

12

-

Obsolete

1 (Unlimited)

EAR99

140W

Three Level Inverter

-

-

Standard

600V

42A

250μA

600V

-

1.35nF

2.45V @ 15V, 30A

NPT

No

1.35nF @ 25V

RoHS Compliant

2012

-

150°C

-40°C

Insulated Gate BIP Transistors

-

-

-

-

-

-

-

1

-

-

-

-

-

20V

2.45 V

-

-

-

APTGT75A1202G vs APTGF30TL601G