Microsemi Corporation APTGT600DU60G

Name: APTGT600DU60G
Brand: Microsemi Corporation
SKU: 3071983-APTGT600DU60G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT600DU60G

Manufacturer:: Microsemi Corporation

Ventron No:: 3071983-APTGT600DU60G

Description:: IGBT MOD TRENCH DUAL SOURCE SP6

ECAD Model:

Datasheet:: APTGT600DU60G

Specifications

Microsemi Corporation APTGT600DU60G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT600DU60G.

Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time
36 Weeks
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SP6
Number of Pins
7
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Published
2012
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Additional Feature
AVALANCHE RATED
Max Power Dissipation
2.3kW
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
7
Number of Elements
2
Configuration
Dual, Common Source
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
2300W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
700A
Current - Collector Cutoff (Max)
750μA
Collector Emitter Breakdown Voltage
600V
Input Capacitance
49nF
Turn On Time
205 ns
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 600A
Turn Off Time-Nom (toff)
400 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
49nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGT600DU60G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT600DU60G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT600DU60G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT600DU60G More Descriptions

Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGT600DU60G
Insulated Gate Bipolar Transistor, 500A I(C), 600V V(BR)CES, N-Channel
Trans IGBT Module N-CH 600V 700A 7-Pin Case SP6
High Voltage Power Module, Dual common source, 600V, RoHSMicrochip SCT
IGBT MODULE 600V 700A 2300W SP6
IGBT MOD TRENCH DUAL SOURCE SP6

Product Comparison

The three parts on the right have similar specifications to APTGT600DU60G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Element Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Input Capacitance (Cies) @ Vce

RoHS Status

Max Operating Temperature

Min Operating Temperature

Subcategory

Gate-Emitter Voltage-Max

VCEsat-Max

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Voltage - Collector Emitter Breakdown (Max)

View Compare
APTGT600DU60G

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

36 Weeks

Chassis Mount, Screw

Chassis Mount

SP6

7

SILICON

-40°C~175°C TJ

2012

e1

yes

Active

1 (Unlimited)

7

EAR99

TIN SILVER COPPER

AVALANCHE RATED

2.3kW

UPPER

UNSPECIFIED

7

2

Dual, Common Source

Dual

ISOLATED

2300W

POWER CONTROL

N-CHANNEL

Standard

600V

700A

750μA

600V

49nF

205 ns

1.8V @ 15V, 600A

400 ns

Trench Field Stop

No

49nF @ 25V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-
APTGF500U60D4G

Microsemi Corporation

-

-

Chassis Mount, Screw

Chassis Mount

D4

4

-

-

2005

e1

yes

Obsolete

1 (Unlimited)

4

EAR99

TIN SILVER COPPER

-

2kW

UPPER

UNSPECIFIED

4

1

Single

-

ISOLATED

2000W

POWER CONTROL

N-CHANNEL

Standard

600V

625A

500μA

600V

26nF

285 ns

2.45V @ 15V, 500A

500 ns

NPT

No

26nF @ 25V

RoHS Compliant

150°C

-40°C

Insulated Gate BIP Transistors

20V

-

-

-

-

-

-

APTGT600DU60G vs APTGF500U60D4G
APTGF350DU60G

Microsemi Corporation

-

-

Chassis Mount, Screw

Chassis Mount

SP6

7

-

-

2012

e1

yes

Obsolete

1 (Unlimited)

7

EAR99

TIN SILVER COPPER

-

1.562kW

UPPER

UNSPECIFIED

7

2

Dual, Common Source

Dual

ISOLATED

1562W

POWER CONTROL

N-CHANNEL

Standard

600V

430A

200μA

600V

17.2nF

51 ns

2.5V @ 15V, 360A

210 ns

NPT

No

17.2nF @ 25V

RoHS Compliant

150°C

-40°C

Insulated Gate BIP Transistors

20V

2.5 V

-

-

-

-

-

APTGT600DU60G vs APTGF350DU60G
APTGF25H120T3G

Microsemi Corporation

-

-

Chassis Mount, Screw

Chassis Mount

SP3

32

-

-

2012

e1

yes

Obsolete

1 (Unlimited)

25

EAR99

TIN SILVER COPPER

-

208W

UPPER

UNSPECIFIED

25

4

Full Bridge Inverter

-

ISOLATED

-

MOTOR CONTROL

N-CHANNEL

Standard

1.2kV

40A

250μA

1.2kV

1.65nF

110 ns

3.7V @ 15V, 25A

386 ns

NPT

Yes

1.65nF @ 25V

RoHS Compliant

150°C

-40°C

Insulated Gate BIP Transistors

20V

3.7 V

NOT SPECIFIED

NOT SPECIFIED

R-XUFM-X25

Not Qualified

1200V

APTGT600DU60G vs APTGF25H120T3G