Microsemi Corporation APTGT35H120T1G

Name: APTGT35H120T1G
Brand: Microsemi Corporation
SKU: 3587146-APTGT35H120T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT35H120T1G

Manufacturer:: Microsemi Corporation

Ventron No:: 3587146-APTGT35H120T1G

Description:: IGBT MOD TRENCH FULL BRIDGE SP1

ECAD Model:

Datasheet:: APTGT35H120T1G

Specifications

Microsemi Corporation APTGT35H120T1G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT35H120T1G.

Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
SP1
Number of Pins
1
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Published
2007
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
12
Terminal Finish
TIN SILVER COPPER
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
208W
Terminal Position
UPPER
Terminal Form
THROUGH-HOLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
12
Qualification Status
Not Qualified
Number of Elements
4
Configuration
Full Bridge Inverter
Case Connection
ISOLATED
Power - Max
208W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
55A
Current - Collector Cutoff (Max)
250μA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
2.5nF
Turn On Time
140 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 35A
Turn Off Time-Nom (toff)
610 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
2.5nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGT35H120T1G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT35H120T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT35H120T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT35H120T1G More Descriptions

Trans IGBT Module N-CH 1.2KV 55A 12-Pin Case SP-1
IGBT MOD TRENCH FULL BRIDGE SP1
IGBT MODULE 1200V 55A 208W SP1

Product Comparison

The three parts on the right have similar specifications to APTGT35H120T1G.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Gate-Emitter Voltage-Max

Input Capacitance (Cies) @ Vce

RoHS Status

ECCN Code

Max Operating Temperature

Min Operating Temperature

JESD-30 Code

Element Configuration

VCEsat-Max

Pbfree Code

View Compare
APTGT35H120T1G

Microsemi Corporation

Chassis Mount

Chassis Mount

SP1

1

SILICON

-40°C~150°C TJ

2007

e1

Obsolete

1 (Unlimited)

12

TIN SILVER COPPER

Insulated Gate BIP Transistors

208W

UPPER

THROUGH-HOLE

NOT SPECIFIED

unknown

NOT SPECIFIED

12

Not Qualified

4

Full Bridge Inverter

ISOLATED

208W

MOTOR CONTROL

N-CHANNEL

Standard

2.1V

55A

250μA

1.2kV

1200V

2.5nF

140 ns

2.1V @ 15V, 35A

610 ns

Trench Field Stop

Yes

20V

2.5nF @ 25V

RoHS Compliant

-

-

-

-

-

-

-

-
APTGF150A120T3WG

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP3

18

-

-

2009

-

Obsolete

1 (Unlimited)

9

-

Insulated Gate BIP Transistors

961W

UPPER

UNSPECIFIED

NOT SPECIFIED

-

NOT SPECIFIED

25

Not Qualified

2

Half Bridge

ISOLATED

-

POWER CONTROL

N-CHANNEL

Standard

1.2kV

210A

250μA

1.2kV

1200V

9.3nF

190 ns

3.7V @ 15V, 150A

390 ns

NPT

Yes

20V

9.3nF @ 25V

RoHS Compliant

EAR99

150°C

-40°C

R-XUFM-X9

Dual

3.7 V

-

APTGT35H120T1G vs APTGF150A120T3WG
APTGF350DU60G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP6

7

-

-

2012

e1

Obsolete

1 (Unlimited)

7

TIN SILVER COPPER

Insulated Gate BIP Transistors

1.562kW

UPPER

UNSPECIFIED

-

-

-

7

-

2

Dual, Common Source

ISOLATED

1562W

POWER CONTROL

N-CHANNEL

Standard

600V

430A

200μA

600V

-

17.2nF

51 ns

2.5V @ 15V, 360A

210 ns

NPT

No

20V

17.2nF @ 25V

RoHS Compliant

EAR99

150°C

-40°C

-

Dual

2.5 V

yes

APTGT35H120T1G vs APTGF350DU60G
APTGF100A1202G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP2

18

-

-

2012

-

Obsolete

1 (Unlimited)

-

-

Insulated Gate BIP Transistors

568W

-

-

-

-

-

-

-

1

Half Bridge

-

-

-

-

Standard

1.2kV

135A

250μA

1.2kV

1200V

6.5nF

-

3.7V @ 15V, 100A

-

NPT

No

20V

6.5nF @ 25V

RoHS Compliant

EAR99

150°C

-40°C

-

Dual

3.7 V

-

APTGT35H120T1G vs APTGF100A1202G