Microsemi Corporation APTGT35DA120D1G

Name: APTGT35DA120D1G
Brand: Microsemi Corporation
SKU: 2854386-APTGT35DA120D1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT35DA120D1G

Manufacturer:: Microsemi Corporation

Ventron No:: 2854386-APTGT35DA120D1G

Description:: IGBT 1200V 55A 205W D1

ECAD Model:

Datasheet:: APTGT35DA120D1

Specifications

Microsemi Corporation APTGT35DA120D1G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT35DA120D1G.

Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
D1
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation
205W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Number of Elements
1
Configuration
Single
Case Connection
ISOLATED
Power - Max
205W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
55A
Current - Collector Cutoff (Max)
5mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
2.5nF
Turn On Time
280 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 35A
Turn Off Time-Nom (toff)
830 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
2.5nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGT35DA120D1G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT35DA120D1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT35DA120D1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT35DA120D1G More Descriptions

IGBT 1200V 55A 205W D1
Power Transistor Modules

Product Comparison

The three parts on the right have similar specifications to APTGT35DA120D1G.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Input Capacitance (Cies) @ Vce

RoHS Status

Number of Pins

ECCN Code

Max Operating Temperature

Min Operating Temperature

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Element Configuration

Gate-Emitter Voltage-Max

VCEsat-Max

Radiation Hardening

Lead Free

View Compare
APTGT35DA120D1G

Microsemi Corporation

Chassis Mount

Chassis Mount

D1

SILICON

-40°C~150°C TJ

2004

e1

yes

Discontinued

1 (Unlimited)

7

Tin/Silver/Copper (Sn/Ag/Cu)

205W

UPPER

UNSPECIFIED

7

R-XUFM-X7

1

Single

ISOLATED

205W

MOTOR CONTROL

N-CHANNEL

Standard

2.1V

55A

5mA

1.2kV

1200V

2.5nF

280 ns

2.1V @ 15V, 35A

830 ns

Trench Field Stop

No

2.5nF @ 25V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-
APTGF150A120T3WG

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP3

-

-

2009

-

-

Obsolete

1 (Unlimited)

9

-

961W

UPPER

UNSPECIFIED

25

R-XUFM-X9

2

Half Bridge

ISOLATED

-

POWER CONTROL

N-CHANNEL

Standard

1.2kV

210A

250μA

1.2kV

1200V

9.3nF

190 ns

3.7V @ 15V, 150A

390 ns

NPT

Yes

9.3nF @ 25V

RoHS Compliant

18

EAR99

150°C

-40°C

Insulated Gate BIP Transistors

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

Dual

20V

3.7 V

-

-

APTGT35DA120D1G vs APTGF150A120T3WG
APTGF25H120T1G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP1

-

-

2007

e1

yes

Obsolete

1 (Unlimited)

12

TIN SILVER COPPER

208W

UPPER

UNSPECIFIED

12

-

4

Full Bridge Inverter

ISOLATED

-

MOTOR CONTROL

N-CHANNEL

Standard

1.2kV

40A

250μA

1.2kV

1200V

1.65nF

110 ns

3.7V @ 15V, 25A

386 ns

NPT

Yes

1.65nF @ 25V

RoHS Compliant

12

EAR99

150°C

-40°C

Insulated Gate BIP Transistors

-

-

-

-

20V

3.7 V

No

Lead Free

APTGT35DA120D1G vs APTGF25H120T1G
APTGF100A1202G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP2

-

-

2012

-

-

Obsolete

1 (Unlimited)

-

-

568W

-

-

-

-

1

Half Bridge

-

-

-

-

Standard

1.2kV

135A

250μA

1.2kV

1200V

6.5nF

-

3.7V @ 15V, 100A

-

NPT

No

6.5nF @ 25V

RoHS Compliant

18

EAR99

150°C

-40°C

Insulated Gate BIP Transistors

-

-

-

Dual

20V

3.7 V

-

-

APTGT35DA120D1G vs APTGF100A1202G