Microsemi Corporation APTGT30DDA60T3G

Name: APTGT30DDA60T3G
Brand: Microsemi Corporation
SKU: 2854375-APTGT30DDA60T3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT30DDA60T3G

Manufacturer:: Microsemi Corporation

Ventron No:: 2854375-APTGT30DDA60T3G

Description:: IGBT MOD TRENCH DL BST CHOP SP3

ECAD Model:

Datasheet:: APTGT30DDA60T3G

Specifications

Microsemi Corporation APTGT30DDA60T3G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT30DDA60T3G.

Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
SP3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Published
2006
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
25
Terminal Finish
TIN SILVER COPPER
Additional Feature
AVALANCHE RATED
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
90W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
25
JESD-30 Code
R-XUFM-X25
Qualification Status
Not Qualified
Number of Elements
2
Configuration
Dual Boost Chopper
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
90W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.9V
Max Collector Current
50A
Current - Collector Cutoff (Max)
250μA
Collector Emitter Breakdown Voltage
600V
Input Capacitance
1.6nF
Turn On Time
170 ns
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 30A
Turn Off Time-Nom (toff)
310 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
1.6nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGT30DDA60T3G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT30DDA60T3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT30DDA60T3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT30DDA60T3G More Descriptions

Trans IGBT Module N-CH 600V 50A 32-Pin Case SP-3
IGBT MOD TRENCH DL BST CHOP SP3
IGBT MODULE 600V 50A 90W SP3
POWER IGBT TRANSISTOR

Product Comparison

The three parts on the right have similar specifications to APTGT30DDA60T3G.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Element Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Gate-Emitter Voltage-Max

Input Capacitance (Cies) @ Vce

RoHS Status

ECCN Code

Max Operating Temperature

Min Operating Temperature

Voltage - Collector Emitter Breakdown (Max)

VCEsat-Max

Radiation Hardening

Lead Free

Pbfree Code

View Compare
APTGT30DDA60T3G

Microsemi Corporation

Chassis Mount

Chassis Mount

SP3

3

SILICON

-40°C~175°C TJ

2006

e1

Obsolete

1 (Unlimited)

25

TIN SILVER COPPER

AVALANCHE RATED

Insulated Gate BIP Transistors

90W

UPPER

UNSPECIFIED

NOT SPECIFIED

unknown

NOT SPECIFIED

25

R-XUFM-X25

Not Qualified

2

Dual Boost Chopper

Dual

ISOLATED

90W

POWER CONTROL

N-CHANNEL

Standard

1.9V

50A

250μA

600V

1.6nF

170 ns

1.9V @ 15V, 30A

310 ns

Trench Field Stop

Yes

20V

1.6nF @ 25V

RoHS Compliant

-

-

-

-

-

-

-

-

-
APTGF150A120T3AG

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP3

20

-

-

-

-

Obsolete

1 (Unlimited)

10

-

-

Insulated Gate BIP Transistors

1.041kW

UPPER

UNSPECIFIED

-

-

-

25

R-XUFM-X10

-

2

Half Bridge

Dual

ISOLATED

1041W

POWER CONTROL

N-CHANNEL

Standard

1.2kV

210A

250μA

1.2kV

9.3nF

190 ns

3.7V @ 15V, 150A

390 ns

NPT

Yes

-

9.3nF @ 25V

RoHS Compliant

EAR99

150°C

-40°C

1200V

3.7 V

No

Lead Free

-

APTGT30DDA60T3G vs APTGF150A120T3AG
APTGF350DU60G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP6

7

-

-

2012

e1

Obsolete

1 (Unlimited)

7

TIN SILVER COPPER

-

Insulated Gate BIP Transistors

1.562kW

UPPER

UNSPECIFIED

-

-

-

7

-

-

2

Dual, Common Source

Dual

ISOLATED

1562W

POWER CONTROL

N-CHANNEL

Standard

600V

430A

200μA

600V

17.2nF

51 ns

2.5V @ 15V, 360A

210 ns

NPT

No

20V

17.2nF @ 25V

RoHS Compliant

EAR99

150°C

-40°C

-

2.5 V

-

-

yes

APTGT30DDA60T3G vs APTGF350DU60G
APTGF100A1202G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP2

18

-

-

2012

-

Obsolete

1 (Unlimited)

-

-

-

Insulated Gate BIP Transistors

568W

-

-

-

-

-

-

-

-

1

Half Bridge

Dual

-

-

-

-

Standard

1.2kV

135A

250μA

1.2kV

6.5nF

-

3.7V @ 15V, 100A

-

NPT

No

20V

6.5nF @ 25V

RoHS Compliant

EAR99

150°C

-40°C

1200V

3.7 V

-

-

-

APTGT30DDA60T3G vs APTGF100A1202G