Microsemi Corporation APTGT300DA170D3G
- Part Number:
- APTGT300DA170D3G
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3587248-APTGT300DA170D3G
- Description:
- IGBT 1700V 530A 1470W D3
- Datasheet:
- APTGT300DA170D3G
Microsemi Corporation APTGT300DA170D3G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT300DA170D3G.
- Factory Lead Time36 Weeks
- MountChassis Mount, Screw
- Mounting TypeChassis Mount
- Package / CaseD-3 Module
- Number of Pins5
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~150°C TJ
- Published2004
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations7
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation1.47kW
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Pin Count7
- JESD-30 CodeR-XUFM-X7
- Number of Elements1
- ConfigurationSingle
- Case ConnectionISOLATED
- Power - Max1470W
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Collector Emitter Voltage (VCEO)1.7kV
- Max Collector Current530A
- Current - Collector Cutoff (Max)8mA
- Collector Emitter Breakdown Voltage1.7kV
- Voltage - Collector Emitter Breakdown (Max)1700V
- Input Capacitance26nF
- Turn On Time430 ns
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 300A
- Turn Off Time-Nom (toff)1200 ns
- IGBT TypeTrench Field Stop
- NTC ThermistorNo
- Gate-Emitter Voltage-Max20V
- Input Capacitance (Cies) @ Vce26nF @ 25V
- RoHS StatusRoHS Compliant
APTGT300DA170D3G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT300DA170D3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT300DA170D3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT300DA170D3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT300DA170D3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APTGT300DA170D3G More Descriptions
Pm-Igbt-Tfs-D3 D3 Box Rohs Compliant: Yes |Microchip APTGT300DA170D3G
Trans IGBT Module N-CH 1.7KV 400A 5-Pin Case D3
High Voltage Power Module, Boost chopper, 1700V, RoHSMicrochip SCT
IGBT MODULE 1700V 530A 1470W D3
Trans IGBT Module N-CH 1.7KV 400A 5-Pin Case D3
High Voltage Power Module, Boost chopper, 1700V, RoHSMicrochip SCT
IGBT MODULE 1700V 530A 1470W D3
The three parts on the right have similar specifications to APTGT300DA170D3G.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPin CountJESD-30 CodeNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeInputCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Input CapacitanceTurn On TimeVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeNTC ThermistorGate-Emitter Voltage-MaxInput Capacitance (Cies) @ VceRoHS StatusMax Operating TemperatureMin Operating TemperatureElement ConfigurationVCEsat-MaxRadiation HardeningLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusView Compare
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APTGT300DA170D3G36 WeeksChassis Mount, ScrewChassis MountD-3 Module5SILICON-40°C~150°C TJ2004e1yesActive1 (Unlimited)7EAR99TIN SILVER COPPERInsulated Gate BIP Transistors1.47kWUPPERUNSPECIFIED7R-XUFM-X71SingleISOLATED1470WMOTOR CONTROLN-CHANNELStandard1.7kV530A8mA1.7kV1700V26nF430 ns2.4V @ 15V, 300A1200 nsTrench Field StopNo20V26nF @ 25VRoHS Compliant----------
-
-Chassis Mount, ScrewChassis MountSP320-----Obsolete1 (Unlimited)10EAR99-Insulated Gate BIP Transistors1.041kWUPPERUNSPECIFIED25R-XUFM-X102Half BridgeISOLATED1041WPOWER CONTROLN-CHANNELStandard1.2kV210A250μA1.2kV1200V9.3nF190 ns3.7V @ 15V, 150A390 nsNPTYes-9.3nF @ 25VRoHS Compliant150°C-40°CDual3.7 VNoLead Free---
-
-Chassis Mount, ScrewChassis MountSP112--2007e1yesObsolete1 (Unlimited)12EAR99TIN SILVER COPPERInsulated Gate BIP Transistors208WUPPERUNSPECIFIED12-4Full Bridge InverterISOLATED-MOTOR CONTROLN-CHANNELStandard1.2kV40A250μA1.2kV1200V1.65nF110 ns3.7V @ 15V, 25A386 nsNPTYes20V1.65nF @ 25VRoHS Compliant150°C-40°C-3.7 VNoLead Free---
-
-Chassis Mount, ScrewChassis MountSP332--2012e1yesObsolete1 (Unlimited)25EAR99TIN SILVER COPPERInsulated Gate BIP Transistors208WUPPERUNSPECIFIED25R-XUFM-X254Full Bridge InverterISOLATED-MOTOR CONTROLN-CHANNELStandard1.2kV40A250μA1.2kV1200V1.65nF110 ns3.7V @ 15V, 25A386 nsNPTYes20V1.65nF @ 25VRoHS Compliant150°C-40°C-3.7 V--NOT SPECIFIEDNOT SPECIFIEDNot Qualified
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