Microsemi Corporation APTGT200A170D3G

Name: APTGT200A170D3G
Brand: Microsemi Corporation
SKU: 3071950-APTGT200A170D3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT200A170D3G

Manufacturer:: Microsemi Corporation

Ventron No:: 3071950-APTGT200A170D3G

Description:: IGBT MODULE TRENCH PHASE LEG D3

ECAD Model:

Datasheet:: APTGT200A170D3G

Specifications

Microsemi Corporation APTGT200A170D3G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT200A170D3G.

Factory Lead Time
36 Weeks
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
D-3 Module
Number of Pins
7
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
11
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation
1.25kW
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
11
JESD-30 Code
R-XUFM-X11
Number of Elements
2
Configuration
Half Bridge
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
1250W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
2.4V
Max Collector Current
400A
Current - Collector Cutoff (Max)
5mA
Collector Emitter Breakdown Voltage
1.7kV
Voltage - Collector Emitter Breakdown (Max)
1700V
Input Capacitance
17nF
Turn On Time
400 ns
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 200A
Turn Off Time-Nom (toff)
1200 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
17nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGT200A170D3G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT200A170D3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT200A170D3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT200A170D3G More Descriptions

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Trans IGBT Module N-CH 1.7KV 310A 7-Pin Case D3
High Voltage Power Module, Phase leg, 1700V, RoHSMicrochip SCT
IGBT MODULE TRENCH PHASE LEG D3
IGBT MODULE 1700V 400A 1250W D3

Product Comparison

The three parts on the right have similar specifications to APTGT200A170D3G.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Configuration

Element Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Input Capacitance (Cies) @ Vce

RoHS Status

Published

Max Operating Temperature

Min Operating Temperature

Subcategory

Gate-Emitter Voltage-Max

VCEsat-Max

Radiation Hardening

Lead Free

View Compare
APTGT200A170D3G

Microsemi Corporation

36 Weeks

Chassis Mount, Screw

Chassis Mount

D-3 Module

7

SILICON

-40°C~150°C TJ

e1

yes

Active

1 (Unlimited)

11

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

1.25kW

UPPER

UNSPECIFIED

11

R-XUFM-X11

2

Half Bridge

Dual

ISOLATED

1250W

POWER CONTROL

N-CHANNEL

Standard

2.4V

400A

5mA

1.7kV

1700V

17nF

400 ns

2.4V @ 15V, 200A

1200 ns

Trench Field Stop

No

17nF @ 25V

RoHS Compliant

-

-

-

-

-

-

-

-

-
APTGF350DU60G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP6

7

-

-

e1

yes

Obsolete

1 (Unlimited)

7

EAR99

TIN SILVER COPPER

1.562kW

UPPER

UNSPECIFIED

7

-

2

Dual, Common Source

Dual

ISOLATED

1562W

POWER CONTROL

N-CHANNEL

Standard

600V

430A

200μA

600V

-

17.2nF

51 ns

2.5V @ 15V, 360A

210 ns

NPT

No

17.2nF @ 25V

RoHS Compliant

2012

150°C

-40°C

Insulated Gate BIP Transistors

20V

2.5 V

-

-

APTGT200A170D3G vs APTGF350DU60G
APTGF25H120T1G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP1

12

-

-

e1

yes

Obsolete

1 (Unlimited)

12

EAR99

TIN SILVER COPPER

208W

UPPER

UNSPECIFIED

12

-

4

Full Bridge Inverter

-

ISOLATED

-

MOTOR CONTROL

N-CHANNEL

Standard

1.2kV

40A

250μA

1.2kV

1200V

1.65nF

110 ns

3.7V @ 15V, 25A

386 ns

NPT

Yes

1.65nF @ 25V

RoHS Compliant

2007

150°C

-40°C

Insulated Gate BIP Transistors

20V

3.7 V

No

Lead Free

APTGT200A170D3G vs APTGF25H120T1G
APTGF100A1202G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP2

18

-

-

-

-

Obsolete

1 (Unlimited)

-

EAR99

-

568W

-

-

-

-

1

Half Bridge

Dual

-

-

-

-

Standard

1.2kV

135A

250μA

1.2kV

1200V

6.5nF

-

3.7V @ 15V, 100A

-

NPT

No

6.5nF @ 25V

RoHS Compliant

2012

150°C

-40°C

Insulated Gate BIP Transistors

20V

3.7 V

-

-

APTGT200A170D3G vs APTGF100A1202G