Microsemi Corporation APTGLQ75H120T3G

Name: APTGLQ75H120T3G
Brand: Microsemi Corporation
SKU: 2854393-APTGLQ75H120T3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGLQ75H120T3G

Manufacturer:: Microsemi Corporation

Ventron No:: 2854393-APTGLQ75H120T3G

Description:: PWR MOD IGBT4 1200V 130A SP3

ECAD Model:

Datasheet:: APTGLQ75H120T3G

Specifications

Microsemi Corporation APTGLQ75H120T3G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGLQ75H120T3G.

Factory Lead Time
36 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
SP1
Number of Pins
1
Operating Temperature
-40°C~175°C TJ
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
385W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Configuration
Full Bridge
Turn On Delay Time
30 ns
Power - Max
385W
Input
Standard
Turn-Off Delay Time
290 ns
Collector Emitter Voltage (VCEO)
2.4V
Max Collector Current
130A
Current - Collector Cutoff (Max)
50μA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
4.4nF
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 75A
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
4.4nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

APTGLQ75H120T3G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGLQ75H120T3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGLQ75H120T3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGLQ75H120T3G More Descriptions

APTGLQ75x Series 1200 V 130 A High Speed Trench Field Stop IGBT4 Power Module
Pm-Igbt-Tfs-Sp3F Sp3F Tube Rohs Compliant: Yes |Microchip APTGLQ75H120T3G
Trans IGBT Module N-CH 1.2KV 130A 32-Pin Case SP1
Insulated Gate Bipolar Transistor, 130A I(C), 1200V V(BR)CES
High Voltage Power Module, Full bridge, 1200V, RoHSMicrochip SCT
IGBT MODULE 1200V 130A 385W SP1

Product Comparison

The three parts on the right have similar specifications to APTGLQ75H120T3G.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Subcategory

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Configuration

Turn On Delay Time

Power - Max

Input

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Input Capacitance

Vce(on) (Max) @ Vge, Ic

IGBT Type

NTC Thermistor

Gate-Emitter Voltage-Max

Input Capacitance (Cies) @ Vce

RoHS Status

Lead Free

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Terminal Position

Terminal Form

Pin Count

Element Configuration

Case Connection

Transistor Application

Polarity/Channel Type

Turn On Time

Turn Off Time-Nom (toff)

VCEsat-Max

Radiation Hardening

JESD-30 Code

Qualification Status

View Compare
APTGLQ75H120T3G

Microsemi Corporation

36 Weeks

Through Hole

Through Hole

SP1

1

-40°C~175°C TJ

2012

Active

1 (Unlimited)

EAR99

Insulated Gate BIP Transistors

385W

NOT SPECIFIED

NOT SPECIFIED

1

Full Bridge

30 ns

385W

Standard

290 ns

2.4V

130A

50μA

1.2kV

1200V

4.4nF

2.4V @ 15V, 75A

Trench Field Stop

Yes

20V

4.4nF @ 25V

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
APTGF350DU60G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP6

7

-

2012

Obsolete

1 (Unlimited)

EAR99

Insulated Gate BIP Transistors

1.562kW

-

-

2

Dual, Common Source

-

1562W

Standard

-

600V

430A

200μA

600V

-

17.2nF

2.5V @ 15V, 360A

NPT

No

20V

17.2nF @ 25V

RoHS Compliant

-

e1

yes

7

TIN SILVER COPPER

150°C

-40°C

UPPER

UNSPECIFIED

7

Dual

ISOLATED

POWER CONTROL

N-CHANNEL

51 ns

210 ns

2.5 V

-

-

-

APTGLQ75H120T3G vs APTGF350DU60G
APTGF25H120T1G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP1

12

-

2007

Obsolete

1 (Unlimited)

EAR99

Insulated Gate BIP Transistors

208W

-

-

4

Full Bridge Inverter

-

-

Standard

-

1.2kV

40A

250μA

1.2kV

1200V

1.65nF

3.7V @ 15V, 25A

NPT

Yes

20V

1.65nF @ 25V

RoHS Compliant

Lead Free

e1

yes

12

TIN SILVER COPPER

150°C

-40°C

UPPER

UNSPECIFIED

12

-

ISOLATED

MOTOR CONTROL

N-CHANNEL

110 ns

386 ns

3.7 V

No

-

-

APTGLQ75H120T3G vs APTGF25H120T1G
APTGF25H120T3G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP3

32

-

2012

Obsolete

1 (Unlimited)

EAR99

Insulated Gate BIP Transistors

208W

NOT SPECIFIED

NOT SPECIFIED

4

Full Bridge Inverter

-

-

Standard

-

1.2kV

40A

250μA

1.2kV

1200V

1.65nF

3.7V @ 15V, 25A

NPT

Yes

20V

1.65nF @ 25V

RoHS Compliant

-

e1

yes

25

TIN SILVER COPPER

150°C

-40°C

UPPER

UNSPECIFIED

25

-

ISOLATED

MOTOR CONTROL

N-CHANNEL

110 ns

386 ns

3.7 V

-

R-XUFM-X25

Not Qualified

APTGLQ75H120T3G vs APTGF25H120T3G