Microsemi Corporation APT46GA90JD40

Name: APT46GA90JD40
Brand: Microsemi Corporation
SKU: 2493321-APT46GA90JD40
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APT46GA90JD40

Manufacturer:: Microsemi Corporation

Ventron No:: 2493321-APT46GA90JD40

Description:: IGBT 900V 87A 284W SOT-227

ECAD Model:

Datasheet:: APT46GA90JD40

Specifications

Microsemi Corporation APT46GA90JD40 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT46GA90JD40.

Factory Lead Time
29 Weeks
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Number of Pins
4
Weight
30.000004g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Series
POWER MOS 8™
Published
1999
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS, UL RECOGNIZED
Max Power Dissipation
284W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
4
Number of Elements
1
Configuration
Single
Case Connection
ISOLATED
Power - Max
284W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
900V
Max Collector Current
87A
Current - Collector Cutoff (Max)
350μA
Collector Emitter Breakdown Voltage
900V
Collector Emitter Saturation Voltage
2.5V
Input Capacitance
4.17nF
Turn On Time
44 ns
Vce(on) (Max) @ Vge, Ic
3.1V @ 15V, 47A
Turn Off Time-Nom (toff)
365 ns
IGBT Type
PT
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
4.17nF @ 25V
Height
9.6mm
Length
38.2mm
Width
25.4mm
RoHS Status
RoHS Compliant

Description

APT46GA90JD40 Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APT46GA90JD40 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT46GA90JD40. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APT46GA90JD40 More Descriptions

Trans IGBT Chip N-CH 900V 87A 284000mW 4-Pin SOT-227
IGBT PT MOS 8 Combi 900 V 46 A SOT-227
Insulated Gate Bipolar Transistor, 87A I(C), 900V V(BR)CES, N-Channel

Product Comparison

The three parts on the right have similar specifications to APT46GA90JD40.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Input Capacitance (Cies) @ Vce

Height

Length

Width

RoHS Status

JESD-609 Code

Terminal Finish

Subcategory

Voltage - Rated DC

Current Rating

Gate-Emitter Voltage-Max

Lead Free

Lifecycle Status

Voltage - Collector Emitter Breakdown (Max)

View Compare
APT46GA90JD40

Microsemi Corporation

29 Weeks

Chassis Mount, Screw

Chassis Mount

SOT-227-4, miniBLOC

4

30.000004g

SILICON

-55°C~150°C TJ

POWER MOS 8™

1999

yes

Active

1 (Unlimited)

4

EAR99

LOW CONDUCTION LOSS, UL RECOGNIZED

284W

UPPER

UNSPECIFIED

4

1

Single

ISOLATED

284W

POWER CONTROL

N-CHANNEL

Standard

900V

87A

350μA

900V

2.5V

4.17nF

44 ns

3.1V @ 15V, 47A

365 ns

PT

No

4.17nF @ 25V

9.6mm

38.2mm

25.4mm

RoHS Compliant

-

-

-

-

-

-

-

-

-

-
APT40GP60JDQ2

Microsemi Corporation

30 Weeks

Chassis Mount, Screw

Chassis Mount

SOT-227-4, miniBLOC

4

-

SILICON

-55°C~150°C TJ

POWER MOS 7®

1999

yes

Active

1 (Unlimited)

4

-

-

284W

UPPER

UNSPECIFIED

4

1

Single

ISOLATED

-

POWER CONTROL

N-CHANNEL

Standard

600V

86A

500μA

600V

-

4.61nF

49 ns

2.7V @ 15V, 40A

160 ns

PT

No

4.61nF @ 25V

-

-

-

RoHS Compliant

e1

Tin/Silver/Copper (Sn/Ag/Cu)

Insulated Gate BIP Transistors

600V

86A

30V

Lead Free

-

-

APT46GA90JD40 vs APT40GP60JDQ2
APT40GL120JU2

Microsemi Corporation

36 Weeks

Chassis, Screw, Stud

Chassis, Stud Mount

SOT-227-4, miniBLOC

4

-

-

-55°C~175°C TJ

-

2012

-

Active

1 (Unlimited)

-

EAR99

-

220W

-

-

-

1

Single

-

220W

-

-

Standard

2.25V

65A

250μA

1.2kV

-

1.95nF

-

2.25V @ 15V, 35A

-

Trench Field Stop

No

1.95nF @ 25V

-

-

-

RoHS Compliant

-

-

Insulated Gate BIP Transistors

-

-

20V

-

IN PRODUCTION (Last Updated: 2 weeks ago)

1200V

APT46GA90JD40 vs APT40GL120JU2
APT40GL120JU3

Microsemi Corporation

36 Weeks

Chassis, Screw, Stud

Chassis, Stud Mount

SOT-227-4, miniBLOC

4

-

-

-55°C~175°C TJ

-

-

-

Active

1 (Unlimited)

-

EAR99

-

220W

-

-

-

1

Single

-

220W

-

-

Standard

2.25V

65A

250μA

1.2kV

-

1.95nF

-

2.25V @ 15V, 35A

-

Trench Field Stop

No

1.95nF @ 25V

-

-

-

RoHS Compliant

-

-

Insulated Gate BIP Transistors

-

-

20V

-

IN PRODUCTION (Last Updated: 2 weeks ago)

1200V

APT46GA90JD40 vs APT40GL120JU3