Microsemi Corporation APT100GT120JR
- Part Number:
- APT100GT120JR
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3587062-APT100GT120JR
- Description:
- IGBT 1200V 123A 570W SOT227
- Datasheet:
- APT100GT120JR
Microsemi Corporation APT100GT120JR technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT100GT120JR.
- Factory Lead Time24 Weeks
- MountChassis Mount, Screw
- Mounting TypeChassis Mount
- Package / CaseSOT-227-4, miniBLOC
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- SeriesThunderbolt IGBT®
- Published1999
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- Additional FeatureHIGH RELIABILITY, UL RECOGNIZED
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation570W
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Pin Count4
- Number of Elements1
- ConfigurationSingle
- Case ConnectionISOLATED
- Power - Max570W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current123A
- Current - Collector Cutoff (Max)100μA
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Input Capacitance6.7nF
- Turn On Time150 ns
- Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 100A
- Turn Off Time-Nom (toff)747 ns
- IGBT TypeNPT
- NTC ThermistorNo
- Gate-Emitter Voltage-Max20V
- Input Capacitance (Cies) @ Vce6.7nF @ 25V
- VCEsat-Max3.7 V
- RoHS StatusRoHS Compliant
APT100GT120JR Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APT100GT120JR or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT100GT120JR. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APT100GT120JR or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT100GT120JR. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT100GT120JR More Descriptions
IGBT NPT Medium Frequency Single 1200 V 100 A SOT-227
Trans IGBT Chip N-CH 1.2KV 123A 4-Pin SOT-227
IGBT MOD 1200V 123A 570W ISOTOP
Insulated Gate Bipolar Transistor - NPT Standard Speed
Trans IGBT Chip N-CH 1.2KV 123A 4-Pin SOT-227
IGBT MOD 1200V 123A 570W ISOTOP
Insulated Gate Bipolar Transistor - NPT Standard Speed
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