AO4447A

Alpha & Omega Semiconductor Inc. AO4447A

Part Number:
AO4447A
Manufacturer:
Alpha & Omega Semiconductor Inc.
Ventron No:
2478451-AO4447A
Description:
MOSFET P-CH 30V 17A 8-SOIC
ECAD Model:
Datasheet:
AO4447A

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Specifications
Alpha & Omega Semiconductor Inc. AO4447A technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO4447A.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • Pbfree Code
    yes
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    8
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE AND RESISTOR
  • Power Dissipation-Max
    3.1W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.1W
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7m Ω @ 17A, 10V
  • Vgs(th) (Max) @ Id
    1.6V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5500pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    17A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    105nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    17A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.007Ohm
  • DS Breakdown Voltage-Min
    30V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
AO4447A Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5500pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 17A amps.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4V 10V).

AO4447A Features
a continuous drain current (ID) of 17A
a 30V drain to source voltage (Vdss)


AO4447A Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4447A applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
AO4447A More Descriptions
30V 17A 3.1W 7m¦¸@10V, 17A 1.6V@250¦ÌA P Channel SOIC-8_150mil MOSFETs ROHS
Trans MOSFET P-CH 30V 18.5A 8-Pin SOIC T/R
30V P-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
IC AMP AUDIO PWR .07W STER 8SOIC
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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