IDT, Integrated Device Technology Inc 71V65603S133BQG8
- Part Number:
- 71V65603S133BQG8
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3234768-71V65603S133BQG8
- Description:
- IC SRAM 9MBIT 133MHZ 165CABGA
- Datasheet:
- 71V65603S133BQG8
IDT, Integrated Device Technology Inc 71V65603S133BQG8 technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 71V65603S133BQG8.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case165-TBGA
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Synchronous, SDR (ZBT)
- Voltage - Supply3.135V~3.465V
- Base Part NumberIDT71V65603
- Memory Size9Mb 256K x 36
- Memory TypeVolatile
- Clock Frequency133MHz
- Access Time4.2ns
- Memory FormatSRAM
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
71V65603S133BQG8 Overview
The operating temperature range for this particular product is from 0°C to 70°C, making it suitable for a wide variety of environments. The packaging for this product is Tape & Reel (TR), which is a common method of packaging electronic components for ease of handling and protection during shipping. The part status for this product is currently active, meaning it is currently in production and available for purchase. The Moisture Sensitivity Level (MSL) for this product is 3, which indicates that it can withstand a maximum of 168 hours in a moisture-saturated environment before potential damage may occur. This product utilizes SRAM technology, specifically Synchronous, SDR (ZBT), making it ideal for high-speed data storage and retrieval. It is important to note that this memory type is volatile, meaning it requires a constant power source to retain data. With an access time of 4.2ns, this SRAM memory format offers fast and efficient performance. The memory interface for this product is parallel, allowing for multiple bits of data to be transferred simultaneously. Additionally, this product is RoHS3 compliant, ensuring that it meets the latest environmental regulations.
71V65603S133BQG8 Features
Package / Case: 165-TBGA
71V65603S133BQG8 Applications
There are a lot of Renesas Electronics America Inc.
71V65603S133BQG8 Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The operating temperature range for this particular product is from 0°C to 70°C, making it suitable for a wide variety of environments. The packaging for this product is Tape & Reel (TR), which is a common method of packaging electronic components for ease of handling and protection during shipping. The part status for this product is currently active, meaning it is currently in production and available for purchase. The Moisture Sensitivity Level (MSL) for this product is 3, which indicates that it can withstand a maximum of 168 hours in a moisture-saturated environment before potential damage may occur. This product utilizes SRAM technology, specifically Synchronous, SDR (ZBT), making it ideal for high-speed data storage and retrieval. It is important to note that this memory type is volatile, meaning it requires a constant power source to retain data. With an access time of 4.2ns, this SRAM memory format offers fast and efficient performance. The memory interface for this product is parallel, allowing for multiple bits of data to be transferred simultaneously. Additionally, this product is RoHS3 compliant, ensuring that it meets the latest environmental regulations.
71V65603S133BQG8 Features
Package / Case: 165-TBGA
71V65603S133BQG8 Applications
There are a lot of Renesas Electronics America Inc.
71V65603S133BQG8 Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
71V65603S133BQG8 More Descriptions
3.3V 256K X 36 ZBT Synchronous 3.3V I/O PipeLined SRAM
IC SRAM 9MBIT PARALLEL 165CABGA
SRAM 9M ZBT SLOW X36 P/L 3.3V
IC FLASH 1G PARALLEL
IC SRAM 9MBIT PARALLEL 165CABGA
SRAM 9M ZBT SLOW X36 P/L 3.3V
IC FLASH 1G PARALLEL
The three parts on the right have similar specifications to 71V65603S133BQG8.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceRoHS StatusSupplier Device PackageView Compare
-
71V65603S133BQG813 WeeksSurface Mount165-TBGA0°C~70°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Synchronous, SDR (ZBT)3.135V~3.465VIDT71V656039Mb 256K x 36Volatile133MHz4.2nsSRAMParallelROHS3 Compliant--
-
14 WeeksSurface Mount100-LQFP-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Synchronous, SDR3.135V~3.63VIDT71V6322Mb 64K x 32Volatile100MHz5nsSRAMParallelROHS3 Compliant100-TQFP (14x14)
-
13 WeeksSurface Mount119-BGA-40°C~85°C TATrayActive3 (168 Hours)SRAM - Synchronous, SDR (ZBT)3.135V~3.465VIDT71V656039Mb 256K x 36Volatile133MHz4.2nsSRAMParallelROHS3 Compliant-
-
13 WeeksSurface Mount165-TBGA0°C~70°C TATrayActive3 (168 Hours)SRAM - Synchronous, SDR (ZBT)3.135V~3.465VIDT71V656039Mb 256K x 36Volatile100MHz5nsSRAMParallelROHS3 Compliant-
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