IDT, Integrated Device Technology Inc 71V35761SA200BQG
- Part Number:
- 71V35761SA200BQG
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3235178-71V35761SA200BQG
- Description:
- IC SRAM 4.5MBIT 200MHZ 165CABGA
- Datasheet:
- IDT Suffixes
IDT, Integrated Device Technology Inc 71V35761SA200BQG technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 71V35761SA200BQG.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case165-TBGA
- Supplier Device Package165-CABGA (13x15)
- Operating Temperature0°C~70°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply3.135V~3.465V
- Base Part NumberIDT71V35761
- Memory Size4.5Mb 128K x 36
- Memory TypeVolatile
- Clock Frequency200MHz
- Access Time3.1ns
- Memory FormatSRAM
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
71V35761SA200BQG Overview
The mounting type for this particular device is surface mount, which allows for easy installation and space-saving on circuit boards. The supplier device package is 165-CABGA (13x15), which refers to the physical dimensions and layout of the device. In terms of packaging, this device comes in a tray format, which is a convenient and secure way to transport and store multiple units. With a moisture sensitivity level (MSL) of 3, this device can withstand up to 168 hours of exposure to moisture before any potential damage may occur. The technology used in this device is SRAM - synchronous, SDR, which is a type of memory that allows for faster data transfer. With a memory size of 4.5Mb 128K x 36, this device has a large storage capacity. It is also important to note that this memory is volatile, meaning it requires a continuous power source to retain data. The memory format is SRAM, which stands for static random access memory, and the memory interface is parallel, allowing for efficient data transfer. Finally, this device is ROHS3 compliant, meaning it meets the standards for environmentally friendly and sustainable production.
71V35761SA200BQG Features
Package / Case: 165-TBGA
71V35761SA200BQG Applications
There are a lot of Renesas Electronics America Inc.
71V35761SA200BQG Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The mounting type for this particular device is surface mount, which allows for easy installation and space-saving on circuit boards. The supplier device package is 165-CABGA (13x15), which refers to the physical dimensions and layout of the device. In terms of packaging, this device comes in a tray format, which is a convenient and secure way to transport and store multiple units. With a moisture sensitivity level (MSL) of 3, this device can withstand up to 168 hours of exposure to moisture before any potential damage may occur. The technology used in this device is SRAM - synchronous, SDR, which is a type of memory that allows for faster data transfer. With a memory size of 4.5Mb 128K x 36, this device has a large storage capacity. It is also important to note that this memory is volatile, meaning it requires a continuous power source to retain data. The memory format is SRAM, which stands for static random access memory, and the memory interface is parallel, allowing for efficient data transfer. Finally, this device is ROHS3 compliant, meaning it meets the standards for environmentally friendly and sustainable production.
71V35761SA200BQG Features
Package / Case: 165-TBGA
71V35761SA200BQG Applications
There are a lot of Renesas Electronics America Inc.
71V35761SA200BQG Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
71V35761SA200BQG More Descriptions
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O
SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM
IC SRAM 4.5M PARALLEL 165CABGA
SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM
IC SRAM 4.5M PARALLEL 165CABGA
The three parts on the right have similar specifications to 71V35761SA200BQG.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceRoHS StatusWrite Cycle Time - Word, PageView Compare
-
71V35761SA200BQG12 WeeksSurface Mount165-TBGA165-CABGA (13x15)0°C~70°C TATrayActive3 (168 Hours)SRAM - Synchronous, SDR3.135V~3.465VIDT71V357614.5Mb 128K x 36Volatile200MHz3.1nsSRAMParallelROHS3 Compliant--
-
-Surface Mount64-LQFP64-TQFP (10x10)0°C~70°C TATrayObsolete3 (168 Hours)SRAM - Dual Port, Asynchronous3V~3.6VIDT71V308Kb 1K x 8Volatile-55nsSRAMParallelNon-RoHS Compliant55ns
-
-Surface Mount64-LQFP64-TQFP (14x14)-40°C~85°C TATrayObsolete3 (168 Hours)SRAM - Dual Port, Asynchronous3V~3.6VIDT71V32116Kb 2K x 8Volatile-25nsSRAMParallelNon-RoHS Compliant25ns
-
-Surface Mount64-LQFP64-TQFP (10x10)0°C~70°C TATrayObsolete3 (168 Hours)SRAM - Dual Port, Asynchronous3V~3.6VIDT71V308Kb 1K x 8Volatile-35nsSRAMParallelNon-RoHS Compliant35ns
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