IDT, Integrated Device Technology Inc 70P259L90BYGI
- Part Number:
- 70P259L90BYGI
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3729329-70P259L90BYGI
- Description:
- IC SRAM 128KBIT 90NS 100FBGA
- Datasheet:
- 70P259L90BYGI
IDT, Integrated Device Technology Inc 70P259L90BYGI technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 70P259L90BYGI.
- Mounting TypeSurface Mount
- Package / Case100-TFBGA
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Dual Port, Asynchronous
- Voltage - Supply1.7V~1.9V
- Memory Size128Kb 8K x 16
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page90ns
70P259L90BYGI Overview
This product has a surface mount mounting type and a 100-TFBGA package/case. It has an operating temperature range of -40°C to 85°C TA and is currently obsolete. The moisture sensitivity level is 3, with a maximum exposure time of 168 hours. It utilizes SRAM technology with a dual port and asynchronous design. The voltage supply range is 1.7V to 1.9V. The memory size is 128Kb, organized as 8K x 16. The memory interface is parallel and the write cycle time for a word or page is 90ns.
70P259L90BYGI Features
Package / Case: 100-TFBGA
70P259L90BYGI Applications
There are a lot of Renesas Electronics America Inc.
70P259L90BYGI Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
This product has a surface mount mounting type and a 100-TFBGA package/case. It has an operating temperature range of -40°C to 85°C TA and is currently obsolete. The moisture sensitivity level is 3, with a maximum exposure time of 168 hours. It utilizes SRAM technology with a dual port and asynchronous design. The voltage supply range is 1.7V to 1.9V. The memory size is 128Kb, organized as 8K x 16. The memory interface is parallel and the write cycle time for a word or page is 90ns.
70P259L90BYGI Features
Package / Case: 100-TFBGA
70P259L90BYGI Applications
There are a lot of Renesas Electronics America Inc.
70P259L90BYGI Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
70P259L90BYGI More Descriptions
SRAM Chip Async Dual 1.8/2.5/3V 128K-bit 8K x 16 90ns 100-Pin CABGA Tray
SRAM Low Power Dual-Port RAM IC
IC SRAM 128K PARALLEL 100CABGA
SRAM Low Power Dual-Port RAM IC
IC SRAM 128K PARALLEL 100CABGA
The three parts on the right have similar specifications to 70P259L90BYGI.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageSupplier Device PackageAccess TimeView Compare
-
70P259L90BYGISurface Mount100-TFBGA-40°C~85°C TATrayObsolete3 (168 Hours)SRAM - Dual Port, Asynchronous1.7V~1.9V128Kb 8K x 16VolatileSRAMParallel90ns---
-
Surface Mount81-TFBGA-40°C~85°C TATape & Reel (TR)Obsolete3 (168 Hours)SRAM - Dual Port, Asynchronous1.7V~1.9V128Kb 8K x 16VolatileSRAMParallel40ns81-CABGA (5x5)40ns
-
Surface Mount100-TFBGA-40°C~85°C TATrayObsolete3 (168 Hours)SRAM - Dual Port, Asynchronous1.7V~1.9V256Kb 16K x 16VolatileSRAMParallel65ns--
-
Surface Mount100-TFBGA-40°C~85°C TATape & Reel (TR)Obsolete3 (168 Hours)SRAM - Dual Port, Asynchronous1.7V~1.9V256Kb 16K x 16VolatileSRAMParallel90ns--
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