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Part Number: |
IXTM12N45 |
IXTM5N100A |
Manufacturer: |
IXYS |
IXYS |
Description: |
12 AMPS, 450-500V, 0.4OM/0.5OM |
Standard Power MOSFET |
Quantity Available: |
Available |
Available |
Datasheets: |
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Factory Lead Time |
- |
35 Weeks |
Mount |
- |
Through Hole |
Mounting Type |
- |
Through Hole |
Package / Case |
- |
TO-204AA, TO-3 |
Number of Pins |
- |
3 |
Transistor Element Material |
- |
SILICON |
Operating Temperature |
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-55°C~150°C TJ |
Packaging |
- |
Tube |
Published |
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2000 |
Pbfree Code |
- |
yes |
Part Status |
- |
Obsolete |
Moisture Sensitivity Level (MSL) |
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1 (Unlimited) |
Number of Terminations |
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2 |
Subcategory |
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FET General Purpose Power |
Technology |
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MOSFET (Metal Oxide) |
Terminal Position |
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BOTTOM |
Terminal Form |
- |
PIN/PEG |
Pin Count |
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2 |
JESD-30 Code |
- |
O-MBFM-P2 |
Number of Elements |
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1 |
Configuration |
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SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max |
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180W Tc |
Operating Mode |
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ENHANCEMENT MODE |
Power Dissipation |
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180W |
Case Connection |
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DRAIN |
FET Type |
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N-Channel |
Transistor Application |
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SWITCHING |
Rds On (Max) @ Id, Vgs |
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2 Ω @ 2.5A, 10V |
Vgs(th) (Max) @ Id |
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4.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
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2600pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
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5A Tc |
Gate Charge (Qg) (Max) @ Vgs |
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130nC @ 10V |
Drain to Source Voltage (Vdss) |
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1000V |
Drive Voltage (Max Rds On,Min Rds On) |
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10V |
Vgs (Max) |
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±20V |
Continuous Drain Current (ID) |
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5A |
Gate to Source Voltage (Vgs) |
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20V |
Drain Current-Max (Abs) (ID) |
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5A |
Drain-source On Resistance-Max |
- |
2Ohm |
Pulsed Drain Current-Max (IDM) |
- |
20A |
Radiation Hardening |
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No |
RoHS Status |
- |
ROHS3 Compliant |
Submit RFQ: |
Submit |
Submit |