Part Number: STH290N4F6-2AG vs STH275N8F7-6AG

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Part Number: STH290N4F6-2AG STH275N8F7-6AG
Manufacturer: STMicroelectronics STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-2 MOSFET N-CH 80V 180A H2PAK-6
Quantity Available: Available Available
Datasheets: - -
Lifecycle Status ACTIVE (Last Updated: 8 months ago) ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 20 Weeks -
Mount Surface Mount Surface Mount
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads Tab), TO-263AB TO-263-7, D2Pak (6 Leads Tab)
Transistor Element Material SILICON -
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tape & Reel (TR) Cut Tape (CT)
Series Automotive, AEC-Q101, STripFET™ Automotive, AEC-Q101, STripFET™ F7
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 2 -
ECCN Code EAR99 EAR99
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Terminal Position SINGLE -
Terminal Form GULL WING -
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Part Number STH290 STH275
JESD-30 Code R-PSSO-G2 -
Number of Elements 1 -
Configuration SINGLE WITH BUILT-IN DIODE Single
Power Dissipation-Max 300W Tc 315W Tc
Operating Mode ENHANCEMENT MODE -
Case Connection DRAIN -
FET Type N-Channel N-Channel
Transistor Application SWITCHING -
Rds On (Max) @ Id, Vgs 1.7m Ω @ 45A, 10V 2.1m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7380pF @ 25V 13600pF @ 50V
Current - Continuous Drain (Id) @ 25°C 180A Tc 180A Tc
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V 193nC @ 10V
Drain to Source Voltage (Vdss) 40V 80V
Drive Voltage (Max Rds On,Min Rds On) 10V 10V
Vgs (Max) ±20V ±20V
Continuous Drain Current (ID) 180A 180A
Drain-source On Resistance-Max 0.0017Ohm -
Pulsed Drain Current-Max (IDM) 720A -
DS Breakdown Voltage-Min 40V -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Subcategory - FET General Purpose Power
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