Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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Part Number: |
STH290N4F6-2AG |
STH260N6F6-6 |
Manufacturer: |
STMicroelectronics |
STMicroelectronics |
Description: |
MOSFET N-CH 40V 180A H2PAK-2 |
MOSFET N-CH 60V 180A H2PAK-6 |
Quantity Available: |
Available |
Available |
Datasheets: |
-
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Lifecycle Status |
ACTIVE (Last Updated: 8 months ago) |
ACTIVE (Last Updated: 7 months ago) |
Factory Lead Time |
20 Weeks |
20 Weeks |
Mount |
Surface Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Surface Mount |
Package / Case |
TO-263-3, D2Pak (2 Leads Tab), TO-263AB |
TO-263-7, D2Pak (6 Leads Tab) |
Transistor Element Material |
SILICON |
- |
Operating Temperature |
-55°C~175°C TJ |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
Series |
Automotive, AEC-Q101, STripFET™ |
DeepGATE™, STripFET™ VI |
Part Status |
Active |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
Number of Terminations |
2 |
- |
ECCN Code |
EAR99 |
EAR99 |
Technology |
MOSFET (Metal Oxide) |
MOSFET (Metal Oxide) |
Terminal Position |
SINGLE |
- |
Terminal Form |
GULL WING |
- |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
NOT SPECIFIED |
Base Part Number |
STH290 |
STH260 |
JESD-30 Code |
R-PSSO-G2 |
- |
Number of Elements |
1 |
- |
Configuration |
SINGLE WITH BUILT-IN DIODE |
- |
Power Dissipation-Max |
300W Tc |
300W Tc |
Operating Mode |
ENHANCEMENT MODE |
- |
Case Connection |
DRAIN |
- |
FET Type |
N-Channel |
N-Channel |
Transistor Application |
SWITCHING |
- |
Rds On (Max) @ Id, Vgs |
1.7m Ω @ 45A, 10V |
2.4m Ω @ 60A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
7380pF @ 25V |
11800pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
180A Tc |
180A Tc |
Gate Charge (Qg) (Max) @ Vgs |
115nC @ 10V |
183nC @ 10V |
Drain to Source Voltage (Vdss) |
40V |
- |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
10V |
Vgs (Max) |
±20V |
±20V |
Continuous Drain Current (ID) |
180A |
180A |
Drain-source On Resistance-Max |
0.0017Ohm |
- |
Pulsed Drain Current-Max (IDM) |
720A |
- |
DS Breakdown Voltage-Min |
40V |
- |
RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
Weight |
- |
1.59999g |
Resistance |
- |
1.7mOhm |
Subcategory |
- |
FET General Purpose Powers |
Number of Channels |
- |
1 |
Element Configuration |
- |
Single |
Turn On Delay Time |
- |
31.4 ns |
Rise Time |
- |
165ns |
Fall Time (Typ) |
- |
62.6 ns |
Turn-Off Delay Time |
- |
144.4 ns |
Gate to Source Voltage (Vgs) |
- |
20V |
Drain to Source Breakdown Voltage |
- |
60V |
Submit RFQ: |
Submit |
Submit |