Part Number: IXFH9N80 vs IXFH24N60X

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Part Number: IXFH9N80 IXFH24N60X
Manufacturer: IXYS IXYS
Description: MOSFET N-CH 800V 9A TO-247 MOSFET N-CH 600V 24A TO-247
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 8 Weeks 19 Weeks
Mount Through Hole Through Hole
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Number of Pins 3 -
Transistor Element Material SILICON -
Operating Temperature -55°C~150°C TJ -55°C~150°C TJ
Packaging Tube Tube
Series HiPerFET™ HiPerFET™
Published 1997 2015
Pbfree Code yes -
Part Status Not For New Designs Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 3 -
Additional Feature AVALANCHE RATED -
Subcategory FET General Purpose Power -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED -
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED -
Pin Count 3 -
Qualification Status Not Qualified -
Number of Elements 1 -
Power Dissipation-Max 180W Tc 400W Tc
Element Configuration Single -
Operating Mode ENHANCEMENT MODE -
Power Dissipation 180W -
Case Connection DRAIN -
FET Type N-Channel N-Channel
Transistor Application SWITCHING -
Rds On (Max) @ Id, Vgs 900m Ω @ 500mA, 10V 175m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4.5V @ 2.5mA 4.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 25V 1910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc 24A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V 47nC @ 10V
Rise Time 15ns -
Drive Voltage (Max Rds On,Min Rds On) 10V 10V
Vgs (Max) ±20V ±30V
Fall Time (Typ) 35 ns -
Turn-Off Delay Time 70 ns -
Continuous Drain Current (ID) 9A 24A
Gate to Source Voltage (Vgs) 20V -
Drain Current-Max (Abs) (ID) 9A -
Drain-source On Resistance-Max 0.9Ohm -
Drain to Source Breakdown Voltage 800V -
Recovery Time 250 ns -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Drain to Source Voltage (Vdss) - 600V
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