Vishay Semiconductor Diodes Division 3N252-M4/51

Name: 3N252-M4/51
Brand: Vishay Semiconductor Diodes Division
SKU: 3551952-3N252-M4/51
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 3N252-M4/51

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 3551952-3N252-M4/51

Description:: BRIDGE RECT 1.5A 1000V KBPM

ECAD Model:

Datasheet:: 3N252-M4/51

Specifications

Vishay Semiconductor Diodes Division 3N252-M4/51 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division 3N252-M4/51.

Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
4-SIP, KBPM
Diode Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tray
Published
2016
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
HTS Code
8541.10.00.80
Technology
Standard
Terminal Form
WIRE
Reach Compliance Code
unknown
JESD-30 Code
R-PSIP-W4
Number of Elements
4
Configuration
BRIDGE, 4 ELEMENTS
Diode Type
Single Phase
Current - Reverse Leakage @ Vr
5μA @ 1000V
Voltage - Forward (Vf) (Max) @ If
1V @ 1A
Case Connection
ISOLATED
Output Current-Max
1.5A
Current - Average Rectified (Io)
1.5A
Number of Phases
1
Non-rep Pk Forward Current-Max
60A
Voltage - Peak Reverse (Max)
1kV
Breakdown Voltage-Min
1000V
RoHS Status
ROHS3 Compliant

Description

3N252-M4/51 Overview
Electronic components in the 4-SIP, KBPM package are basically the same.Through Hole is the method of mounting the device.The normal operation of the device is ensured when it is operated at the temperature of 0 degrees Celsius.1.5A is its maximum supported output voltage.

3N252-M4/51 Features
4-SIP, KBPM package
operating at a temperature of -55°C~150°C TJ
the maximum output voltage of 1.5A

3N252-M4/51 Applications
There are a lot of Vishay Semiconductor Diodes Division
3N252-M4/51 applications of bridge rectifiers.

Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
Transportation – Traction rectifiers and auxiliary rectifiers
Inductive heating – Input rectifiers
Welding systems – Input rectifiers and fast recovery diodes

3N252-M4/51 More Descriptions

BRIDGE RECT 1PHASE 1KV 1.5A KBPM
1.5A,1000V,GLASS,IN-LINE BRIDGE

Product Comparison

The three parts on the right have similar specifications to 3N252-M4/51.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

HTS Code

Technology

Terminal Form

Reach Compliance Code

JESD-30 Code

Number of Elements

Configuration

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Output Current-Max

Current - Average Rectified (Io)

Number of Phases

Non-rep Pk Forward Current-Max

Voltage - Peak Reverse (Max)

Breakdown Voltage-Min

RoHS Status

Contact Plating

Number of Pins

JESD-609 Code

Pbfree Code

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Element Configuration

Max Reverse Leakage Current

Max Surge Current

Forward Voltage

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Height

Length

Width

View Compare
3N252-M4/51

Vishay Semiconductor Diodes Division

22 Weeks

Through Hole

Through Hole

4-SIP, KBPM

SILICON

-55°C~150°C TJ

Tray

2016

Obsolete

1 (Unlimited)

4

EAR99

UL RECOGNIZED

8541.10.00.80

Standard

WIRE

unknown

R-PSIP-W4

4

BRIDGE, 4 ELEMENTS

Single Phase

5μA @ 1000V

1V @ 1A

ISOLATED

1.5A

1.5A

1

60A

1kV

1000V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
3N250-M4/51

Vishay Semiconductor Diodes Division

22 Weeks

Through Hole

Through Hole

4-SIP, KBPM

SILICON

-55°C~150°C TJ

Tray

2016

Obsolete

1 (Unlimited)

4

EAR99

UL RECOGNIZED

8541.10.00.80

Standard

WIRE

unknown

R-PSIP-W4

4

BRIDGE, 4 ELEMENTS

Single Phase

5μA @ 600V

1V @ 1A

ISOLATED

1.5A

1.5A

1

60A

600V

600V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3N252-M4/51 vs 3N250-M4/51
3N258-E4/51

Vishay Semiconductor Diodes Division

22 Weeks

Through Hole

Through Hole

4-SIP, KBPM

SILICON

-55°C~165°C TJ

Tray

2011

Obsolete

1 (Unlimited)

4

-

UL RECOGNIZED

-

Standard

-

unknown

-

1

-

Single Phase

5μA @ 800V

1.1V @ 3.14A

ISOLATED

2A

2A

1

-

-

-

ROHS3 Compliant

Silver

4

e4

yes

Bridge Rectifier Diodes

NOT APPLICABLE

NOT APPLICABLE

3N258

4

Not Qualified

Single

5μA

60A

1.1V

5μA

800V

60A

60A

11.68mm

15.24mm

5.08mm

3N252-M4/51 vs 3N258-E4/51
3N251-M4/51

Vishay Semiconductor Diodes Division

22 Weeks

Through Hole

Through Hole

4-SIP, KBPM

SILICON

-55°C~150°C TJ

Tray

2016

Obsolete

1 (Unlimited)

4

EAR99

UL RECOGNIZED

8541.10.00.80

Standard

WIRE

unknown

R-PSIP-W4

4

BRIDGE, 4 ELEMENTS

Single Phase

5μA @ 800V

1V @ 1A

ISOLATED

1.5A

1.5A

1

60A

800V

800V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3N252-M4/51 vs 3N251-M4/51