Part Number: IXGP20N100 vs IXGP15N120B

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Part Number: IXGP20N100 IXGP15N120B
Manufacturer: IXYS IXYS
Description: IGBT 1000V 40A 150W TO220 IGBT 1200V 30A 150W TO220AB
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 8 Weeks 8 Weeks
Mount Through Hole Through Hole
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Number of Pins 3 3
Weight 2.299997g 2.299997g
Transistor Element Material SILICON SILICON
Operating Temperature -55°C~150°C TJ -55°C~150°C TJ
Packaging Tube Tube
Published 2003 2000
Pbfree Code yes yes
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 3 3
Subcategory Insulated Gate BIP Transistors Insulated Gate BIP Transistors
Max Power Dissipation 150W 150W
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Part Number IXG*20N100 IXG*15N120
Pin Count 3 3
Qualification Status Not Qualified Not Qualified
Number of Elements 1 1
Element Configuration Single Single
Case Connection COLLECTOR -
Input Type Standard Standard
Power - Max 150W 150W
Transistor Application MOTOR CONTROL POWER CONTROL
Polarity/Channel Type N-CHANNEL N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV 1.2kV
Max Collector Current 40A 30A
JEDEC-95 Code TO-220AB TO-220AB
Collector Emitter Breakdown Voltage 1kV 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1000V 1200V
Collector Emitter Saturation Voltage 3V 3.2V
Turn On Time 60 ns 43 ns
Test Condition 800V, 20A, 47 Ω, 15V 960V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A 3.2V @ 15V, 15A
Turn Off Time-Nom (toff) 1220 ns 660 ns
IGBT Type PT PT
Gate Charge 73nC 69nC
Current - Collector Pulsed (Icm) 80A 60A
Td (on/off) @ 25°C 30ns/350ns 25ns/180ns
Switching Energy 3.5mJ (off) 1.75mJ (off)
Gate-Emitter Voltage-Max 20V 20V
Gate-Emitter Thr Voltage-Max 5V 5V
Fall Time-Max (tf) 700ns -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Series - HiPerFAST™
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