Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
|
|
Part Number: |
QJD1210SB1 |
QJD1210011 |
Manufacturer: |
Powerex Inc. |
Powerex Inc. |
Description: |
MOD MOSFET 1200V 10A DUAL SIC |
MOSFET 2N-CH 1200V 100A SIC |
Quantity Available: |
Available |
Available |
Datasheets: |
-
|
-
|
Part Status |
Active |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
RoHS Status |
RoHS Compliant |
RoHS Compliant |
Mount |
- |
Chassis Mount |
Mounting Type |
- |
Chassis Mount |
Package / Case |
- |
Module |
Operating Temperature |
- |
-40°C~175°C TJ |
Packaging |
- |
Bulk |
Published |
- |
2014 |
Number of Terminations |
- |
20 |
ECCN Code |
- |
EAR99 |
Max Power Dissipation |
- |
900W |
Terminal Position |
- |
UPPER |
Terminal Form |
- |
UNSPECIFIED |
Reach Compliance Code |
- |
unknown |
JESD-30 Code |
- |
R-PUFM-X20 |
Number of Elements |
- |
2 |
Configuration |
- |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Operating Mode |
- |
ENHANCEMENT MODE |
Case Connection |
- |
ISOLATED |
FET Type |
- |
2 N-Channel (Dual) |
Transistor Application |
- |
SWITCHING |
Rds On (Max) @ Id, Vgs |
- |
25m Ω @ 100A, 20V |
Vgs(th) (Max) @ Id |
- |
5V @ 10mA |
Input Capacitance (Ciss) (Max) @ Vds |
- |
10200pF @ 800V |
Current - Continuous Drain (Id) @ 25°C |
- |
100A Tc |
Gate Charge (Qg) (Max) @ Vgs |
- |
500nC @ 20V |
Drain to Source Voltage (Vdss) |
- |
1200V 1.2kV |
Continuous Drain Current (ID) |
- |
100A |
Drain-source On Resistance-Max |
- |
0.025Ohm |
Pulsed Drain Current-Max (IDM) |
- |
250A |
DS Breakdown Voltage-Min |
- |
1200V |
FET Technology |
- |
METAL-OXIDE SEMICONDUCTOR |
FET Feature |
- |
Silicon Carbide (SiC) |
Submit RFQ: |
Submit |
Submit |