Part Number: QJD1210SB1 vs QJD1210011

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Part Number: QJD1210SB1 QJD1210011
Manufacturer: Powerex Inc. Powerex Inc.
Description: MOD MOSFET 1200V 10A DUAL SIC MOSFET 2N-CH 1200V 100A SIC
Quantity Available: Available Available
Datasheets: - -
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
RoHS Status RoHS Compliant RoHS Compliant
Mount - Chassis Mount
Mounting Type - Chassis Mount
Package / Case - Module
Operating Temperature - -40°C~175°C TJ
Packaging - Bulk
Published - 2014
Number of Terminations - 20
ECCN Code - EAR99
Max Power Dissipation - 900W
Terminal Position - UPPER
Terminal Form - UNSPECIFIED
Reach Compliance Code - unknown
JESD-30 Code - R-PUFM-X20
Number of Elements - 2
Configuration - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode - ENHANCEMENT MODE
Case Connection - ISOLATED
FET Type - 2 N-Channel (Dual)
Transistor Application - SWITCHING
Rds On (Max) @ Id, Vgs - 25m Ω @ 100A, 20V
Vgs(th) (Max) @ Id - 5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds - 10200pF @ 800V
Current - Continuous Drain (Id) @ 25°C - 100A Tc
Gate Charge (Qg) (Max) @ Vgs - 500nC @ 20V
Drain to Source Voltage (Vdss) - 1200V 1.2kV
Continuous Drain Current (ID) - 100A
Drain-source On Resistance-Max - 0.025Ohm
Pulsed Drain Current-Max (IDM) - 250A
DS Breakdown Voltage-Min - 1200V
FET Technology - METAL-OXIDE SEMICONDUCTOR
FET Feature - Silicon Carbide (SiC)
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