Part Number: IRG4BC10SD-L vs IRG4BC30S-S
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|---|---|---|
| Part Number: | IRG4BC10SD-L | IRG4BC30S-S |
| Manufacturer: | Infineon Technologies | Infineon Technologies |
| Description: | IGBT 600V 14A 38W TO262 | IGBT 600V 34A 100W D2PAK |
| Quantity Available: | Available | Available |
| Datasheets: | - | IRG4BC30S-S |
| Mounting Type | Through Hole | Surface Mount |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-263-3, D2Pak (2 Leads Tab), TO-263AB |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tube | Tube |
| Published | 2001 | 2000 |
| Part Status | Obsolete | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Input Type | Standard | Standard |
| Power - Max | 38W | 100W |
| Reverse Recovery Time | 28ns | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V | 600V |
| Current - Collector (Ic) (Max) | 14A | 34A |
| Test Condition | 480V, 8A, 100 Ω, 15V | 480V, 18A, 23 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A | 1.6V @ 15V, 18A |
| Gate Charge | 15nC | 50nC |
| Current - Collector Pulsed (Icm) | 18A | 68A |
| Td (on/off) @ 25°C | 76ns/815ns | 22ns/540ns |
| Switching Energy | 310μJ (on), 3.28mJ (off) | 260μJ (on), 3.45mJ (off) |
| RoHS Status | Non-RoHS Compliant | Non-RoHS Compliant |
| Surface Mount | - | YES |
| Transistor Element Material | - | SILICON |
| JESD-609 Code | - | e3 |
| Number of Terminations | - | 2 |
| ECCN Code | - | EAR99 |
| Terminal Finish | - | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | - | Insulated Gate BIP Transistors |
| Terminal Position | - | SINGLE |
| Terminal Form | - | GULL WING |
| Peak Reflow Temperature (Cel) | - | 260 |
| Time@Peak Reflow Temperature-Max (s) | - | 30 |
| JESD-30 Code | - | R-PSSO-G2 |
| Number of Elements | - | 1 |
| Configuration | - | SINGLE |
| Case Connection | - | COLLECTOR |
| Transistor Application | - | POWER CONTROL |
| Polarity/Channel Type | - | N-CHANNEL |
| Power Dissipation-Max (Abs) | - | 100W |
| Turn On Time | - | 40 ns |
| Turn Off Time-Nom (toff) | - | 1550 ns |
| Gate-Emitter Voltage-Max | - | 20V |
| Gate-Emitter Thr Voltage-Max | - | 6V |
| Fall Time-Max (tf) | - | 590ns |
| Submit RFQ: | Submit | Submit |
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