Part Number: IXGX72N60C3H1 vs IXGX50N120C3H1

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Part Number: IXGX72N60C3H1 IXGX50N120C3H1
Manufacturer: IXYS IXYS
Description: IGBT 600V 75A 540W PLUS247 IGBT 1200V 95A 460W PLUS247
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 8 Weeks 8 Weeks
Mount Through Hole Through Hole
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Transistor Element Material SILICON SILICON
Operating Temperature -55°C~150°C TJ -55°C~150°C TJ
Packaging Tube Tube
Series GenX3™ GenX3™
Published 2009 2012
JESD-609 Code e1 e1
Pbfree Code yes yes
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 3 3
Terminal Finish TIN SILVER COPPER Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors Insulated Gate BIP Transistors
Max Power Dissipation 540W 460W
Terminal Position SINGLE SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Reach Compliance Code unknown -
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Part Number IXG*72N60 -
Pin Count 3 3
JESD-30 Code R-PSFM-T3 R-PSIP-T3
Qualification Status Not Qualified Not Qualified
Number of Elements 1 1
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR COLLECTOR
Input Type Standard Standard
Turn On Delay Time 27 ns -
Power - Max 540W 460W
Transistor Application POWER CONTROL POWER CONTROL
Polarity/Channel Type N-CHANNEL N-CHANNEL
Turn-Off Delay Time 77 ns -
Collector Emitter Voltage (VCEO) 2.5V 4.2V
Max Collector Current 75A 95A
Reverse Recovery Time 140 ns 75 ns
Collector Emitter Breakdown Voltage 600V 1.2kV
Turn On Time 62 ns 60 ns
Test Condition 480V, 50A, 2 Ω, 15V 600V, 40A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A 4.2V @ 15V, 40A
Turn Off Time-Nom (toff) 244 ns 485 ns
IGBT Type PT PT
Gate Charge 174nC 196nC
Current - Collector Pulsed (Icm) 360A 240A
Td (on/off) @ 25°C 27ns/77ns 31ns/123ns
Switching Energy 1.03mJ (on), 480μJ (off) 2mJ (on), 630μJ (off)
Gate-Emitter Voltage-Max 20V 20V
Gate-Emitter Thr Voltage-Max 5.5V 5V
Fall Time-Max (tf) 110ns -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lead Free Lead Free -
Voltage - Collector Emitter Breakdown (Max) - 1200V
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