Part Number: IXGX72N60C3H1 vs IXGX40N120BD1
Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! | ||
---|---|---|
Part Number: | IXGX72N60C3H1 | IXGX40N120BD1 |
Manufacturer: | IXYS | IXYS |
Description: | IGBT 600V 75A 540W PLUS247 | IGBT 1200V PLUS247 |
Quantity Available: | Available | Available |
Datasheets: | - | - |
Factory Lead Time | 8 Weeks | 8 Weeks |
Mount | Through Hole | Through Hole |
Mounting Type | Through Hole | Through Hole |
Package / Case | TO-247-3 | ISOPLUS247™ |
Transistor Element Material | SILICON | SILICON |
Operating Temperature | -55°C~150°C TJ | - |
Packaging | Tube | Tube |
Series | GenX3™ | - |
Published | 2009 | - |
JESD-609 Code | e1 | e1 |
Pbfree Code | yes | yes |
Part Status | Active | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
Number of Terminations | 3 | 3 |
Terminal Finish | TIN SILVER COPPER | TIN SILVER COPPER |
Additional Feature | LOW CONDUCTION LOSS | - |
Subcategory | Insulated Gate BIP Transistors | - |
Max Power Dissipation | 540W | - |
Terminal Position | SINGLE | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | NOT SPECIFIED |
Reach Compliance Code | unknown | - |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | NOT SPECIFIED |
Base Part Number | IXG*72N60 | IXG*40N120 |
Pin Count | 3 | 3 |
JESD-30 Code | R-PSFM-T3 | R-PSIP-T3 |
Qualification Status | Not Qualified | Not Qualified |
Number of Elements | 1 | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Case Connection | COLLECTOR | COLLECTOR |
Input Type | Standard | Standard |
Turn On Delay Time | 27 ns | - |
Power - Max | 540W | - |
Transistor Application | POWER CONTROL | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL | N-CHANNEL |
Turn-Off Delay Time | 77 ns | - |
Collector Emitter Voltage (VCEO) | 2.5V | - |
Max Collector Current | 75A | - |
Reverse Recovery Time | 140 ns | - |
Collector Emitter Breakdown Voltage | 600V | 1.2kV |
Turn On Time | 62 ns | 105 ns |
Test Condition | 480V, 50A, 2 Ω, 15V | - |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A | - |
Turn Off Time-Nom (toff) | 244 ns | 1030 ns |
IGBT Type | PT | - |
Gate Charge | 174nC | - |
Current - Collector Pulsed (Icm) | 360A | - |
Td (on/off) @ 25°C | 27ns/77ns | - |
Switching Energy | 1.03mJ (on), 480μJ (off) | - |
Gate-Emitter Voltage-Max | 20V | - |
Gate-Emitter Thr Voltage-Max | 5.5V | - |
Fall Time-Max (tf) | 110ns | - |
RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Lead Free | Lead Free | - |
Operating Temperature (Max) | - | 150°C |
Voltage - Collector Emitter Breakdown (Max) | - | 1200V |
Collector Current-Max (IC) | - | 75A |
Submit RFQ: | Submit | Submit |