Part Number: IRGP4660D-EPBF vs IRGP4069-EPBF

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Part Number: IRGP4660D-EPBF IRGP4069-EPBF
Manufacturer: Infineon Technologies Infineon Technologies
Description: IGBT 600V 100A 330W TO247AD IGBT 600V 76A 268W TO247
Quantity Available: Available Available
Datasheets: - IRGP4069PbF/-EPbF
Factory Lead Time 26 Weeks 14 Weeks
Mount Through Hole Through Hole
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Number of Pins 3 3
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tube Tube
Published 2013 2011
Part Status Active Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
ECCN Code EAR99 EAR99
Max Power Dissipation 330W 268W
Element Configuration Single Single
Power Dissipation 134W -
Input Type Standard Standard
Power - Max 330W 268W
Collector Emitter Voltage (VCEO) 1.9V 1.85V
Max Collector Current 100A 76A
Reverse Recovery Time 115 ns -
Collector Emitter Breakdown Voltage 600V 600V
Collector Emitter Saturation Voltage 1.9V 1.6V
Test Condition 400V, 48A, 10 Ω, 15V 400V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 48A 1.85V @ 15V, 35A
Gate Charge 140nC 104nC
Current - Collector Pulsed (Icm) 144A 105A
Td (on/off) @ 25°C 60ns/145ns 46ns/105ns
Switching Energy 625μJ (on), 1.28mJ (off) 390μJ (on), 632μJ (off)
Radiation Hardening No -
RoHS Status ROHS3 Compliant RoHS Compliant
Transistor Element Material - SILICON
Number of Terminations - 3
Subcategory - Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) - NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) - NOT SPECIFIED
Qualification Status - Not Qualified
Number of Elements - 1
Rise Time-Max - 42ns
Case Connection - COLLECTOR
Transistor Application - POWER CONTROL
Polarity/Channel Type - N-CHANNEL
JEDEC-95 Code - TO-247AD
Turn On Time - 78 ns
Turn Off Time-Nom (toff) - 188 ns
IGBT Type - Trench
Gate-Emitter Voltage-Max - 20V
Gate-Emitter Thr Voltage-Max - 6.5V
Fall Time-Max (tf) - 54ns
REACH SVHC - No SVHC
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