Infineon Technologies IRGP4660D-EPBF
- Part Number:
- IRGP4660D-EPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3587326-IRGP4660D-EPBF
- Description:
- IGBT 600V 100A 330W TO247AD
- ECAD Model:
-
- Datasheet:
- IRGP4660D-EPBF
Infineon Technologies IRGP4660D-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4660D-EPBF.
- Factory Lead Time26 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation330W
- Element ConfigurationSingle
- Power Dissipation134W
- Input TypeStandard
- Power - Max330W
- Collector Emitter Voltage (VCEO)1.9V
- Max Collector Current100A
- Reverse Recovery Time115 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.9V
- Test Condition400V, 48A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 48A
- Gate Charge140nC
- Current - Collector Pulsed (Icm)144A
- Td (on/off) @ 25°C60ns/145ns
- Switching Energy625μJ (on), 1.28mJ (off)
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
IRGP4660D-EPBF Description
IHM-A Modul Trench/Feldstopp IGBT4 with Emitter Controlled 3 Diode
IRGP4660D-EPBF Features
IRGP4660D-EPBF Applications
Switching applications
IHM-A Modul Trench/Feldstopp IGBT4 with Emitter Controlled 3 Diode
IRGP4660D-EPBF Features
IRGP4660D-EPBF Applications
Switching applications
IRGP4660D-EPBF More Descriptions
Trans IGBT Chip N-CH 600V 100A 330000mW 3-Pin(3 Tab) TO-247AD Tube
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD
; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Vo
600 V, 60 A IGBT in TO-247 package, TO247COPAK-3, RoHSInfineon SCT
IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC
Target Applications: AC-DC; Pump; Solar; UPS; Welding
IRGP4660 - DISCRETE IGBT WITH AN
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD
; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Vo
600 V, 60 A IGBT in TO-247 package, TO247COPAK-3, RoHSInfineon SCT
IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC
Target Applications: AC-DC; Pump; Solar; UPS; Welding
IRGP4660 - DISCRETE IGBT WITH AN
The three parts on the right have similar specifications to IRGP4660D-EPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationElement ConfigurationPower DissipationInput TypePower - MaxCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRadiation HardeningRoHS StatusTransistor Element MaterialNumber of TerminationsSubcategoryVoltage - Rated DCCurrent RatingNumber of ElementsCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimePolarity/Channel TypeTurn-Off Delay TimeJEDEC-95 CodeVoltage - Collector Emitter Breakdown (Max)Turn On TimeTurn Off Time-Nom (toff)IGBT TypeGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxREACH SVHCLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberFall Time-Max (tf)Qualification StatusRise Time-MaxView Compare
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IRGP4660D-EPBF26 WeeksThrough HoleThrough HoleTO-247-33-55°C~175°C TJTube2013Active1 (Unlimited)EAR99330WSingle134WStandard330W1.9V100A115 ns600V1.9V400V, 48A, 10 Ω, 15V1.9V @ 15V, 48A140nC144A60ns/145ns625μJ (on), 1.28mJ (off)NoROHS3 Compliant---------------------------- -
14 WeeksThrough HoleThrough HoleTO-247-33-55°C~150°C TJBulk1999Obsolete1 (Unlimited)EAR99300WSingle300WStandard-4.85V40A300 ns1.2kV3.05V600V, 20A, 5 Ω, 15V4.85V @ 15V, 40A169nC120A-850μJ (on), 425μJ (off)NoRoHS CompliantSILICON3Insulated Gate BIP Transistors1.2kV40A1ISOLATED50 nsPOWER CONTROL20nsN-CHANNEL204 nsTO-247AD1200V70 ns228 nsNPT20V6VNo SVHCLead Free------
-
-Through HoleThrough HoleTO-247-33-40°C~175°C TJTube2013Obsolete1 (Unlimited)EAR99250WSingle-Standard250W1.9V65A-600V1.6V400V, 24A, 10 Ω, 15V1.9V @ 15V, 24A75nC72A40ns/105ns100μJ (on), 600μJ (off)-RoHS Compliant--Insulated Gate BIP Transistors-------N-CHANNEL------20V6.5VNo SVHC-NOT SPECIFIEDNOT SPECIFIEDIRGP464040ns--
-
14 WeeksThrough HoleThrough HoleTO-247-33-55°C~175°C TJTube2011Obsolete1 (Unlimited)EAR99268WSingle-Standard268W1.85V76A-600V1.6V400V, 35A, 10 Ω, 15V1.85V @ 15V, 35A104nC105A46ns/105ns390μJ (on), 632μJ (off)-RoHS CompliantSILICON3Insulated Gate BIP Transistors--1COLLECTOR-POWER CONTROL-N-CHANNEL-TO-247AD-78 ns188 nsTrench20V6.5VNo SVHC-NOT SPECIFIEDNOT SPECIFIED-54nsNot Qualified42ns
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