Part Number: CSD83325L vs CSD83325LT
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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| Part Number: | CSD83325L | CSD83325LT |
| Manufacturer: | Texas Instruments | Texas Instruments |
| Description: | 12-V, N channel NexFET? power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection | 12-V, N channel NexFET? power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection |
| Quantity Available: | Available | Available |
| Datasheets: | csd83325l | csd83325l |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) | ACTIVE (Last Updated: 5 days ago) |
| Factory Lead Time | 6 Weeks | 6 Weeks |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 6-XFBGA | 6-XFBGA |
| Number of Pins | 6 | 6 |
| Transistor Element Material | SILICON | SILICON |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | NexFET™ | NexFET™ |
| Pbfree Code | yes | yes |
| Part Status | Active | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 6 | 6 |
| ECCN Code | EAR99 | - |
| Max Power Dissipation | 2.3W | 2.3W |
| Terminal Position | BOTTOM | BOTTOM |
| Terminal Form | NO LEAD | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | NOT SPECIFIED |
| Base Part Number | CSD83325 | CSD83325 |
| Number of Elements | 2 | 2 |
| Element Configuration | Dual | Dual |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Turn On Delay Time | 205 ns | 205 ns |
| FET Type | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) Common Drain |
| Transistor Application | SWITCHING | SWITCHING |
| Vgs(th) (Max) @ Id | 1.25V @ 250μA | 1.25V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 10.9nC @ 4.5V | 10.9nC @ 4.5V |
| Rise Time | 353ns | 353ns |
| Drain to Source Voltage (Vdss) | 12V | 12V |
| Fall Time (Typ) | 589 ns | 589 ns |
| Turn-Off Delay Time | 711 ns | 711 ns |
| Continuous Drain Current (ID) | 8A | 8A |
| Gate to Source Voltage (Vgs) | 10V | 10V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard | Standard |
| Feedback Cap-Max (Crss) | 144 pF | 144 pF |
| Length | 1.11mm | 1.11mm |
| Width | 2.16mm | 2.16mm |
| Thickness | 200μm | 200μm |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lead Free | Lead Free | Lead Free |
| Threshold Voltage | - | 950mV |
| Drain to Source Resistance | - | 9.9mOhm |
| REACH SVHC | - | No SVHC |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
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CSD83325L | Texas Instruments | 12-V, N channel NexFET? power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection | Compare |
