| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
CSD83325L |
CSD87384M |
| Manufacturer: |
Texas Instruments |
Texas Instruments |
| Description: |
12-V, N channel NexFET? power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection |
30-V, N channel synchronous buck NexFET? power MOSFET, 5 mm x 3.5 mm LGA, 30 A |
| Quantity Available: |
Available |
Available |
| Datasheets: |
csd83325l
|
csd87384m
|
| Lifecycle Status |
ACTIVE (Last Updated: 5 days ago) |
ACTIVE (Last Updated: 3 days ago) |
| Factory Lead Time |
6 Weeks |
12 Weeks |
| Mount |
Surface Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
6-XFBGA |
5-LGA |
| Number of Pins |
6 |
5 |
| Transistor Element Material |
SILICON |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Series |
NexFET™ |
NexFET™ |
| Pbfree Code |
yes |
yes |
| Part Status |
Active |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
6 |
5 |
| ECCN Code |
EAR99 |
EAR99 |
| Max Power Dissipation |
2.3W |
8W |
| Terminal Position |
BOTTOM |
BOTTOM |
| Terminal Form |
NO LEAD |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
260 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
NOT SPECIFIED |
| Base Part Number |
CSD83325 |
CSD87384 |
| Number of Elements |
2 |
2 |
| Element Configuration |
Dual |
- |
| Operating Mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Turn On Delay Time |
205 ns |
- |
| FET Type |
2 N-Channel (Dual) Common Drain |
2 N-Channel (Half Bridge) |
| Transistor Application |
SWITCHING |
SWITCHING |
| Vgs(th) (Max) @ Id |
1.25V @ 250μA |
1.9V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
10.9nC @ 4.5V |
9.2nC @ 4.5V |
| Rise Time |
353ns |
- |
| Drain to Source Voltage (Vdss) |
12V |
30V |
| Fall Time (Typ) |
589 ns |
- |
| Turn-Off Delay Time |
711 ns |
- |
| Continuous Drain Current (ID) |
8A |
30A |
| Gate to Source Voltage (Vgs) |
10V |
- |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| FET Feature |
Standard |
Logic Level Gate |
| Feedback Cap-Max (Crss) |
144 pF |
- |
| Length |
1.11mm |
5mm |
| Width |
2.16mm |
3.5mm |
| Thickness |
200μm |
400μm |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Lead Free |
| Contact Plating |
- |
Gold |
| JESD-609 Code |
- |
e4 |
| Subcategory |
- |
FET General Purpose Power |
| Number of Outputs |
- |
1 |
| Max Output Current |
- |
95A |
| Configuration |
- |
COMPLEX |
| Rds On (Max) @ Id, Vgs |
- |
7.7m Ω @ 25A, 8V |
| Output Current per Channel |
- |
30A |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
1150pF @ 15V |
| Drain-source On Resistance-Max |
- |
0.0089Ohm |
| DS Breakdown Voltage-Min |
- |
30V |
| Submit RFQ: |
Submit |
Submit |
