Part Number: CSD83325L vs CSD87381P
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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| Part Number: | CSD83325L | CSD87381P |
| Manufacturer: | Texas Instruments | Texas Instruments |
| Description: | 12-V, N channel NexFET? power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection | 30-V, N channel synchronous buck NexFET? power MOSFET, 3 mm x 2.5 mm LGA, 15 A |
| Quantity Available: | Available | Available |
| Datasheets: | csd83325l | csd87381p |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) | ACTIVE (Last Updated: 3 days ago) |
| Factory Lead Time | 6 Weeks | 6 Weeks |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 6-XFBGA | 5-LGA |
| Number of Pins | 6 | 5 |
| Transistor Element Material | SILICON | - |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | NexFET™ | NexFET™ |
| Pbfree Code | yes | yes |
| Part Status | Active | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 6 | 5 |
| ECCN Code | EAR99 | EAR99 |
| Max Power Dissipation | 2.3W | 4W |
| Terminal Position | BOTTOM | UNSPECIFIED |
| Terminal Form | NO LEAD | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | 260 | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | NOT SPECIFIED |
| Base Part Number | CSD83325 | CSD87381 |
| Number of Elements | 2 | - |
| Element Configuration | Dual | Single |
| Operating Mode | ENHANCEMENT MODE | - |
| Turn On Delay Time | 205 ns | - |
| FET Type | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Half Bridge) |
| Transistor Application | SWITCHING | - |
| Vgs(th) (Max) @ Id | 1.25V @ 250μA | 1.9V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 10.9nC @ 4.5V | 5nC @ 4.5V |
| Rise Time | 353ns | 16.3ns |
| Drain to Source Voltage (Vdss) | 12V | 30V |
| Fall Time (Typ) | 589 ns | 2.9 ns |
| Turn-Off Delay Time | 711 ns | 16.8 ns |
| Continuous Drain Current (ID) | 8A | 15A |
| Gate to Source Voltage (Vgs) | 10V | 8V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | - |
| FET Feature | Standard | Logic Level Gate |
| Feedback Cap-Max (Crss) | 144 pF | - |
| Length | 1.11mm | 3mm |
| Width | 2.16mm | 2.5mm |
| Thickness | 200μm | 400μm |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lead Free | Lead Free | Lead Free |
| Contact Plating | - | Gold |
| JESD-609 Code | - | e4 |
| Number of Functions | - | 1 |
| Number of Outputs | - | 1 |
| Max Output Current | - | 40A |
| Input Voltage-Nom | - | 12V |
| Analog IC - Other Type | - | SWITCHING REGULATOR |
| Power Dissipation | - | 4W |
| Input Voltage (Max) | - | 24V |
| Rds On (Max) @ Id, Vgs | - | 16.3m Ω @ 8A, 8V |
| Output Current per Channel | - | 15A |
| Control Technique | - | PULSE WIDTH MODULATION |
| Input Capacitance (Ciss) (Max) @ Vds | - | 564pF @ 15V |
| Switcher Configuration | - | BUCK |
| Drain to Source Breakdown Voltage | - | 30V |
| Height | - | 480μm |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
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CSD87333Q3DT | Texas Instruments | 30-V, N channel synchronous buck NexFET? power MOSFET, SON 3 mm x 3 mm power block, 15 A | Compare |
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CSD87333Q3D | Texas Instruments | 30-V, N channel synchronous buck NexFET? power MOSFET, SON 3 mm x 3 mm power block, 15 A | Compare |
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CSD87313DMST | Texas Instruments | 30-V, N channel NexFET? power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm | Compare |
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CSD87312Q3E | Texas Instruments | 30-V, N channel NexFET? power MOSFET, dual common source SON 3 mm x 3 mm, 38 mOhm | Compare |
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CSD87313DMS | Texas Instruments | 30-V, N channel NexFET? power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm | Compare |
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CSD87335Q3D | Texas Instruments | 30-V, N channel synchronous buck NexFET? power MOSFET, SON 3 mm x 3 mm power block, 25 A | Compare |
