Part Number: PMBFJ176,215 vs PMBFJ113,215

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Part Number: PMBFJ176,215 PMBFJ113,215
Manufacturer: NXP USA Inc. NXP USA Inc.
Description: JFET P-CH 30V 0.3W SOT23 PMBFJ113,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at Ventron
Quantity Available: Available Available
Datasheets: - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Surface Mount YES YES
Transistor Element Material SILICON SILICON
Operating Temperature 150°C TJ 150°C TJ
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 1997 1997
JESD-609 Code e3 e3
Part Status Obsolete Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 3 3
ECCN Code EAR99 EAR99
Terminal Finish Tin (Sn) Tin (Sn)
HTS Code 8541.21.00.95 8541.21.00.95
Subcategory FET General Purpose Small Signal Other Transistors
Terminal Position DUAL DUAL
Terminal Form GULL WING GULL WING
Peak Reflow Temperature (Cel) 260 260
Time@Peak Reflow Temperature-Max (s) 40 40
Base Part Number MBFJ176 MBFJ113
Pin Count 3 3
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Qualification Status Not Qualified Not Qualified
Number of Elements 1 1
Configuration SINGLE SINGLE
Operating Mode DEPLETION MODE DEPLETION MODE
Power - Max 300mW 300mW
FET Type P-Channel N-Channel
Transistor Application SWITCHING SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 8pF @ 10V VGS 6pF @ 10V VGS
Drain-source On Resistance-Max 250Ohm 100Ohm
DS Breakdown Voltage-Min 30V 40V
FET Technology JUNCTION JUNCTION
Power Dissipation-Max (Abs) 0.3W 0.3W
Current - Drain (Idss) @ Vds (Vgs=0) 2mA @ 15V 2mA @ 15V
Voltage - Cutoff (VGS off) @ Id 1V @ 10nA 3V @ 1μA
Voltage - Breakdown (V(BR)GSS) 30V 40V
Resistance - RDS(On) 250Ohm 100Ohm
RoHS Status ROHS3 Compliant ROHS3 Compliant
JEDEC-95 Code - TO-236AB
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