Part Number: IRL7833SPBF vs IRL7833LPBF

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Part Number: IRL7833SPBF IRL7833LPBF
Manufacturer: Infineon Technologies Infineon Technologies
Description: MOSFET N-CH 30V 150A D2PAK MOSFET N-CH 30V 150A TO-262
Quantity Available: Available Available
Datasheets: - -
Mount Surface Mount Through Hole
Mounting Type Surface Mount Through Hole
Package / Case TO-263-3, D2Pak (2 Leads Tab), TO-263AB TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3 -
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tube Tube
Series HEXFET® HEXFET®
Published 2004 2004
Part Status Discontinued Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
ECCN Code EAR99 -
Resistance 3.8MOhm -
Voltage - Rated DC 30V 30V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Current Rating 150A 150A
Number of Channels 1 -
Power Dissipation-Max 140W Tc 140W Tc
Element Configuration Single -
Power Dissipation 140W 140W
Turn On Delay Time 18 ns 18 ns
FET Type N-Channel N-Channel
Rds On (Max) @ Id, Vgs 3.8m Ω @ 38A, 10V 3.8m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4170pF @ 15V 4170pF @ 15V
Current - Continuous Drain (Id) @ 25°C 150A Tc 150A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V 47nC @ 4.5V
Rise Time 50ns 50ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V 4.5V 10V
Vgs (Max) ±20V ±20V
Fall Time (Typ) 6.9 ns 6.9 ns
Turn-Off Delay Time 21 ns 21 ns
Continuous Drain Current (ID) 150A 150A
Threshold Voltage 1.4V -
Gate to Source Voltage (Vgs) 20V 20V
Drain to Source Breakdown Voltage 30V 30V
Recovery Time 63 ns -
Max Junction Temperature (Tj) 175°C -
Nominal Vgs 2.3 V -
Height 5.084mm -
Length 10.668mm -
Width 9.65mm -
REACH SVHC No SVHC -
Radiation Hardening No No
RoHS Status ROHS3 Compliant RoHS Compliant
Lead Free Lead Free Lead Free
Number of Elements - 1
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