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| Part Number: |
IRL7833SPBF |
IRL7833PBF |
| Manufacturer: |
Infineon Technologies |
Infineon Technologies |
| Description: |
MOSFET N-CH 30V 150A D2PAK |
MOSFET N-CH 30V 150A TO-220AB |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Mount |
Surface Mount |
Through Hole |
| Mounting Type |
Surface Mount |
Through Hole |
| Package / Case |
TO-263-3, D2Pak (2 Leads Tab), TO-263AB |
TO-220-3 |
| Number of Pins |
3 |
3 |
| Operating Temperature |
-55°C~175°C TJ |
-55°C~175°C TJ |
| Packaging |
Tube |
Tube |
| Series |
HEXFET® |
HEXFET® |
| Published |
2004 |
2004 |
| Part Status |
Discontinued |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
EAR99 |
| Resistance |
3.8MOhm |
3.8MOhm |
| Voltage - Rated DC |
30V |
30V |
| Technology |
MOSFET (Metal Oxide) |
MOSFET (Metal Oxide) |
| Current Rating |
150A |
150A |
| Number of Channels |
1 |
- |
| Power Dissipation-Max |
140W Tc |
140W Tc |
| Element Configuration |
Single |
Single |
| Power Dissipation |
140W |
140W |
| Turn On Delay Time |
18 ns |
18 ns |
| FET Type |
N-Channel |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.8m Ω @ 38A, 10V |
3.8m Ω @ 38A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 250μA |
2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4170pF @ 15V |
4170pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
150A Tc |
150A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 4.5V |
47nC @ 4.5V |
| Rise Time |
50ns |
50ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
4.5V 10V |
| Vgs (Max) |
±20V |
±20V |
| Fall Time (Typ) |
6.9 ns |
6.9 ns |
| Turn-Off Delay Time |
21 ns |
21 ns |
| Continuous Drain Current (ID) |
150A |
150A |
| Threshold Voltage |
1.4V |
2.3V |
| Gate to Source Voltage (Vgs) |
20V |
20V |
| Drain to Source Breakdown Voltage |
30V |
30V |
| Recovery Time |
63 ns |
63 ns |
| Max Junction Temperature (Tj) |
175°C |
- |
| Nominal Vgs |
2.3 V |
2.3 V |
| Height |
5.084mm |
8.763mm |
| Length |
10.668mm |
10.5156mm |
| Width |
9.65mm |
4.69mm |
| REACH SVHC |
No SVHC |
No SVHC |
| Radiation Hardening |
No |
No |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Lead Free |
| Factory Lead Time |
- |
12 Weeks |
| Contact Plating |
- |
Tin |
| Transistor Element Material |
- |
SILICON |
| Number of Terminations |
- |
3 |
| Subcategory |
- |
FET General Purpose Power |
| Number of Elements |
- |
1 |
| Operating Mode |
- |
ENHANCEMENT MODE |
| Case Connection |
- |
DRAIN |
| Transistor Application |
- |
SWITCHING |
| JEDEC-95 Code |
- |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
- |
75A |
| Pulsed Drain Current-Max (IDM) |
- |
600A |
| Avalanche Energy Rating (Eas) |
- |
560 mJ |
| Submit RFQ: |
Submit |
Submit |
