Part Number: IRL7833SPBF vs IRL7472L1TRPBF
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! | .jpg) |
|
|---|---|---|
| Part Number: | IRL7833SPBF | IRL7472L1TRPBF |
| Manufacturer: | Infineon Technologies | Infineon Technologies |
| Description: | MOSFET N-CH 30V 150A D2PAK | MOSFET N-CH 40V 375A |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads Tab), TO-263AB | DirectFET™ Isometric L8 |
| Number of Pins | 3 | 2 |
| Operating Temperature | -55°C~175°C TJ | -55°C~175°C TJ |
| Packaging | Tube | Tape & Reel (TR) |
| Series | HEXFET® | StrongIRFET™ |
| Published | 2004 | 2009 |
| Part Status | Discontinued | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| ECCN Code | EAR99 | EAR99 |
| Resistance | 3.8MOhm | - |
| Voltage - Rated DC | 30V | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Current Rating | 150A | - |
| Number of Channels | 1 | 1 |
| Power Dissipation-Max | 140W Tc | 3.8W Ta 341W Tc |
| Element Configuration | Single | Single |
| Power Dissipation | 140W | 3.8W |
| Turn On Delay Time | 18 ns | 68 ns |
| FET Type | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 3.8m Ω @ 38A, 10V | 0.59m Ω @ 195A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250μA | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4170pF @ 15V | 20082pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 150A Tc | 375A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 4.5V | 330nC @ 4.5V |
| Rise Time | 50ns | - |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V | 4.5V 10V |
| Vgs (Max) | ±20V | ±20V |
| Fall Time (Typ) | 6.9 ns | - |
| Turn-Off Delay Time | 21 ns | 174 ns |
| Continuous Drain Current (ID) | 150A | 68A |
| Threshold Voltage | 1.4V | 1V |
| Gate to Source Voltage (Vgs) | 20V | 20V |
| Drain to Source Breakdown Voltage | 30V | 40V |
| Recovery Time | 63 ns | - |
| Max Junction Temperature (Tj) | 175°C | 175°C |
| Nominal Vgs | 2.3 V | - |
| Height | 5.084mm | 740μm |
| Length | 10.668mm | 9.15mm |
| Width | 9.65mm | 7.1mm |
| REACH SVHC | No SVHC | No SVHC |
| Radiation Hardening | No | - |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lead Free | Lead Free | Lead Free |
| Factory Lead Time | - | 12 Weeks |
| Transistor Element Material | - | SILICON |
| Number of Terminations | - | 9 |
| Terminal Position | - | BOTTOM |
| Terminal Form | - | NO LEAD |
| Peak Reflow Temperature (Cel) | - | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | - | NOT SPECIFIED |
| JESD-30 Code | - | R-XBCC-N9 |
| Number of Elements | - | 1 |
| Operating Mode | - | ENHANCEMENT MODE |
| Case Connection | - | DRAIN |
| Transistor Application | - | SWITCHING |
| Drain-source On Resistance-Max | - | 0.00045Ohm |
| Avalanche Energy Rating (Eas) | - | 765 mJ |
| Submit RFQ: | Submit | Submit |
