Part Number: CY7S1061GE30-10ZXI vs CY7S1049G30-10VXI
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Part Number: | CY7S1061GE30-10ZXI | CY7S1049G30-10VXI |
Manufacturer: | Cypress Semiconductor Corp | Cypress Semiconductor Corp |
Description: | IC SRAM 16MBIT 10NS 48TSOP | IC SRAM 4MB 10NS 36SOIC |
Quantity Available: | Available | Available |
Datasheets: | - | - |
Factory Lead Time | 13 Weeks | 8 Weeks |
Mounting Type | Surface Mount | Surface Mount |
Package / Case | 48-TFSOP (0.724, 18.40mm Width) | 36-BSOJ (0.400, 10.16mm Width) |
Surface Mount | YES | YES |
Operating Temperature | -40°C~85°C TA | -40°C~85°C TA |
Packaging | Tray | Tube |
Published | 1996 | 2015 |
Part Status | Active | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 3 (168 Hours) |
Number of Terminations | 48 | 36 |
ECCN Code | 3A991.B.2.A | 3A991.B.2.A |
HTS Code | 8542.32.00.41 | 8542.32.00.41 |
Technology | SRAM - Synchronous, SDR | SRAM - Asynchronous |
Voltage - Supply | 2.2V~3.6V | 2.2V~3.6V |
Terminal Position | DUAL | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | NOT SPECIFIED |
Number of Functions | 1 | 1 |
Supply Voltage | 3V | 3V |
Terminal Pitch | 0.5mm | 1.27mm |
Reflow Temperature-Max (s) | NOT SPECIFIED | NOT SPECIFIED |
JESD-30 Code | R-PDSO-G48 | R-PDSO-J36 |
Supply Voltage-Max (Vsup) | 3.6V | 3.6V |
Supply Voltage-Min (Vsup) | 2.2V | 2.2V |
Memory Size | 16Mb 1M x 16 | 4Mb 512K x 8 |
Memory Type | Volatile | Volatile |
Operating Mode | ASYNCHRONOUS | - |
Memory Format | SRAM | SRAM |
Memory Interface | Parallel | Parallel |
Organization | 1MX16 | 512KX8 |
Memory Width | 16 | 8 |
Write Cycle Time - Word, Page | 10ns | 10ns |
Memory Density | 16777216 bit | 4194304 bit |
Access Time (Max) | 10 ns | 10 ns |
Height Seated (Max) | 1.2mm | 3.76mm |
Length | 18.4mm | 23.495mm |
Width | 12mm | 10.16mm |
RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Submit RFQ: | Submit | Submit |