Cypress Semiconductor Corp CY7S1061GE30-10ZXI
- Part Number:
- CY7S1061GE30-10ZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3236824-CY7S1061GE30-10ZXI
- Description:
- IC SRAM 16MBIT 10NS 48TSOP
- Datasheet:
- CY7S1061GE30-10ZXI
Cypress Semiconductor Corp CY7S1061GE30-10ZXI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7S1061GE30-10ZXI.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- ECCN Code3A991.B.2.A
- HTS Code8542.32.00.41
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply2.2V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G48
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.2V
- Memory Size16Mb 1M x 16
- Memory TypeVolatile
- Operating ModeASYNCHRONOUS
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization1MX16
- Memory Width16
- Write Cycle Time - Word, Page10ns
- Memory Density16777216 bit
- Access Time (Max)10 ns
- Height Seated (Max)1.2mm
- Length18.4mm
- Width12mm
- RoHS StatusROHS3 Compliant
CY7S1061GE30-10ZXI Overview
The part status of the component is active, indicating that it is currently available for use. It has a moisture sensitivity level (MSL) of 3, meaning that it can withstand exposure to moisture for up to 168 hours without being damaged. The voltage supply range for this component is 2.2V to 3.6V, providing a wide range of options for power input. The peak reflow temperature is not specified, so it is important to carefully monitor and control the temperature during the manufacturing process. This component has 1 function and requires a supply voltage of 3V. It operates in asynchronous mode, meaning that it does not require a clock signal. With a memory density of 16777216 bits, it can store a large amount of data. The access time for this component is a maximum of 10 nanoseconds, ensuring fast data retrieval. Its width is 12mm, making it compact and suitable for use in various devices.
CY7S1061GE30-10ZXI Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
CY7S1061GE30-10ZXI Applications
There are a lot of Cypress Semiconductor Corp CY7S1061GE30-10ZXI Memory applications.
supercomputers
hard disk drive (HDD)
Camcorders
workstations,
main computer memory
networking
cell phones
networks
multimedia computers
nonvolatile BIOS memory
The part status of the component is active, indicating that it is currently available for use. It has a moisture sensitivity level (MSL) of 3, meaning that it can withstand exposure to moisture for up to 168 hours without being damaged. The voltage supply range for this component is 2.2V to 3.6V, providing a wide range of options for power input. The peak reflow temperature is not specified, so it is important to carefully monitor and control the temperature during the manufacturing process. This component has 1 function and requires a supply voltage of 3V. It operates in asynchronous mode, meaning that it does not require a clock signal. With a memory density of 16777216 bits, it can store a large amount of data. The access time for this component is a maximum of 10 nanoseconds, ensuring fast data retrieval. Its width is 12mm, making it compact and suitable for use in various devices.
CY7S1061GE30-10ZXI Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
CY7S1061GE30-10ZXI Applications
There are a lot of Cypress Semiconductor Corp CY7S1061GE30-10ZXI Memory applications.
supercomputers
hard disk drive (HDD)
Camcorders
workstations,
main computer memory
networking
cell phones
networks
multimedia computers
nonvolatile BIOS memory
CY7S1061GE30-10ZXI More Descriptions
SRAM Chip Async Single 3V 16M-Bit 1M x 16 10ns 48-Pin TSOP-I Tray
Asynchronous SRAM, 16384 Kb Density, 10 ns Speed, SOP-48, RoHSCypress Semiconductor SCT
IC SRAM 16MBIT PARALLEL 48TSOP I
SRAM 16Mb Fast SRAM With PowerSnooze
Asynchronous SRAM, 16384 Kb Density, 10 ns Speed, SOP-48, RoHSCypress Semiconductor SCT
IC SRAM 16MBIT PARALLEL 48TSOP I
SRAM 16Mb Fast SRAM With PowerSnooze
The three parts on the right have similar specifications to CY7S1061GE30-10ZXI.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Height Seated (Max)LengthWidthRoHS StatusPbfree CodeView Compare
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CY7S1061GE30-10ZXI13 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATray1996Active3 (168 Hours)483A991.B.2.A8542.32.00.41SRAM - Synchronous, SDR2.2V~3.6VDUALNOT SPECIFIED13V0.5mmNOT SPECIFIEDR-PDSO-G483.6V2.2V16Mb 1M x 16VolatileASYNCHRONOUSSRAMParallel1MX161610ns16777216 bit10 ns1.2mm18.4mm12mmROHS3 Compliant--
-
8 WeeksSurface Mount36-BSOJ (0.400, 10.16mm Width)YES-40°C~85°C TATube2015Active3 (168 Hours)363A991.B.2.A8542.32.00.41SRAM - Asynchronous2.2V~3.6VDUALNOT SPECIFIED13V1.27mmNOT SPECIFIEDR-PDSO-J363.6V2.2V4Mb 512K x 8Volatile-SRAMParallel512KX8810ns4194304 bit10 ns3.76mm23.495mm10.16mmROHS3 Compliant-
-
13 WeeksSurface Mount54-TSOP (0.400, 10.16mm Width)YES-40°C~85°C TATape & Reel (TR)1996Active3 (168 Hours)543A991.B.2.A8542.32.00.41SRAM - Synchronous, SDR2.2V~3.6VDUALNOT SPECIFIED13V0.8mmNOT SPECIFIEDR-PDSO-G543.6V2.2V16Mb 1M x 16VolatileASYNCHRONOUSSRAMParallel1MX161610ns16777216 bit10 ns1.2mm22.415mm10.16mmROHS3 Compliantyes
-
13 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATape & Reel (TR)1996Active3 (168 Hours)483A991.B.2.A8542.32.00.41SRAM - Synchronous, SDR2.2V~3.6VDUALNOT SPECIFIED13V0.5mmNOT SPECIFIEDR-PDSO-G483.6V2.2V16Mb 1M x 16VolatileASYNCHRONOUSSRAMParallel1MX161610ns16777216 bit10 ns1.2mm18.4mm12mmROHS3 Compliantyes
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