Part Number: CY7S1061GE30-10BVXIT vs CY7S1061GE30-10BVXI
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Part Number: | CY7S1061GE30-10BVXIT | CY7S1061GE30-10BVXI |
Manufacturer: | Cypress Semiconductor Corp | Cypress Semiconductor Corp |
Description: | IC SRAM 16MBIT 10NS 48BGA | IC SRAM 16MBIT 10NS 48BGA |
Quantity Available: | Available | Available |
Datasheets: | - | - |
Factory Lead Time | 13 Weeks | 13 Weeks |
Mounting Type | Surface Mount | Surface Mount |
Package / Case | 48-VFBGA | 48-VFBGA |
Surface Mount | YES | YES |
Number of Pins | 48 | 48 |
Operating Temperature | -40°C~85°C TA | -40°C~85°C TA |
Packaging | Tape & Reel (TR) | Tray |
Published | 1996 | 1996 |
Pbfree Code | yes | - |
Part Status | Active | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 3 (168 Hours) |
Number of Terminations | 48 | 48 |
ECCN Code | 3A991.B.2.A | 3A991.B.2.A |
HTS Code | 8542.32.00.41 | 8542.32.00.41 |
Technology | SRAM - Synchronous, SDR | SRAM - Synchronous, SDR |
Voltage - Supply | 2.2V~3.6V | 2.2V~3.6V |
Terminal Position | BOTTOM | BOTTOM |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | NOT SPECIFIED |
Number of Functions | 1 | 1 |
Supply Voltage | 3V | 3V |
Terminal Pitch | 0.75mm | 0.75mm |
Reflow Temperature-Max (s) | NOT SPECIFIED | NOT SPECIFIED |
Supply Voltage-Max (Vsup) | 3.6V | 3.6V |
Supply Voltage-Min (Vsup) | 2.2V | 2.2V |
Memory Size | 16Mb 1M x 16 | 16Mb 1M x 16 |
Memory Type | Volatile | Volatile |
Operating Mode | ASYNCHRONOUS | ASYNCHRONOUS |
Memory Format | SRAM | SRAM |
Memory Interface | Parallel | Parallel |
Organization | 1MX16 | 1MX16 |
Memory Width | 16 | 16 |
Write Cycle Time - Word, Page | 10ns | 10ns |
Memory Density | 16777216 bit | 16777216 bit |
Access Time (Max) | 10 ns | 10 ns |
Height Seated (Max) | 1mm | 1mm |
Length | 8mm | 8mm |
Width | 6mm | 6mm |
RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Submit RFQ: | Submit | Submit |