Part Number: IS61NVP25636A-200TQLI vs IS61C25616AL-10KLI-TR

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Part Number: IS61NVP25636A-200TQLI IS61C25616AL-10KLI-TR
Manufacturer: ISSI, Integrated Silicon Solution Inc ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 9MBIT 200MHZ 100TQFP Memory IC 4 Mb kb 50mA mA 16b b
Quantity Available: Available Available
Datasheets: IS61N(LP,VP)yyyyyA -
Factory Lead Time 12 Weeks 8 Weeks
Mounting Type Surface Mount Surface Mount
Package / Case 100-LQFP 44-BSOJ (0.400, 10.16mm Width)
Surface Mount YES -
Number of Pins 100 44
Operating Temperature -40°C~85°C TA -40°C~85°C TA
Packaging Tray Tape & Reel (TR)
JESD-609 Code e3 -
Pbfree Code yes -
Part Status Active Active
Moisture Sensitivity Level (MSL) 2 (1 Year) 2 (1 Year)
Number of Terminations 100 -
ECCN Code 3A991.B.2.A -
Terminal Finish Matte Tin (Sn) - annealed -
Additional Feature PIPELINED ARCHITECTURE -
Technology SRAM - Synchronous, SDR SRAM - Asynchronous
Voltage - Supply 2.375V~2.625V 4.5V~5.5V
Terminal Position QUAD -
Peak Reflow Temperature (Cel) 260 -
Number of Functions 1 -
Supply Voltage 2.5V -
Terminal Pitch 0.65mm -
Time@Peak Reflow Temperature-Max (s) 40 -
Pin Count 100 -
Operating Supply Voltage 2.5V 5V
Supply Voltage-Max (Vsup) 2.625V -
Supply Voltage-Min (Vsup) 2.375V -
Memory Size 9Mb 256K x 36 4Mb 256K x 16
Number of Ports 4 1
Nominal Supply Current 280mA 50mA
Memory Type Volatile Volatile
Clock Frequency 200MHz -
Access Time 3.1ns 10ns
Memory Format SRAM SRAM
Memory Interface Parallel Parallel
Organization 256KX36 -
Output Characteristics 3-STATE -
Memory Width 36 -
Address Bus Width 18b 18b
Density 9 Mb 4 Mb
Standby Current-Max 0.05A -
I/O Type COMMON -
Sync/Async Synchronous Asynchronous
Word Size 36b 16b
Standby Voltage-Min 2.38V -
Height Seated (Max) 1.6mm -
Length 20mm -
Radiation Hardening No No
RoHS Status ROHS3 Compliant ROHS3 Compliant
Supplier Device Package - 44-SOJ
Max Operating Temperature - 85°C
Min Operating Temperature - -40°C
Interface - Parallel
Max Supply Voltage - 5.5V
Min Supply Voltage - 4.5V
Write Cycle Time - Word, Page - 10ns
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