IS61NVP25636A-200TQLI

ISSI, Integrated Silicon Solution Inc IS61NVP25636A-200TQLI

Part Number:
IS61NVP25636A-200TQLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Ventron No:
3235903-IS61NVP25636A-200TQLI
Description:
IC SRAM 9MBIT 200MHZ 100TQFP
ECAD Model:
Datasheet:
IS61N(LP,VP)yyyyyA

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Specifications
ISSI, Integrated Silicon Solution Inc IS61NVP25636A-200TQLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61NVP25636A-200TQLI.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    100-LQFP
  • Surface Mount
    YES
  • Number of Pins
    100
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    2 (1 Year)
  • Number of Terminations
    100
  • ECCN Code
    3A991.B.2.A
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Additional Feature
    PIPELINED ARCHITECTURE
  • Technology
    SRAM - Synchronous, SDR
  • Voltage - Supply
    2.375V~2.625V
  • Terminal Position
    QUAD
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    2.5V
  • Terminal Pitch
    0.65mm
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    100
  • Operating Supply Voltage
    2.5V
  • Supply Voltage-Max (Vsup)
    2.625V
  • Supply Voltage-Min (Vsup)
    2.375V
  • Memory Size
    9Mb 256K x 36
  • Number of Ports
    4
  • Nominal Supply Current
    280mA
  • Memory Type
    Volatile
  • Clock Frequency
    200MHz
  • Access Time
    3.1ns
  • Memory Format
    SRAM
  • Memory Interface
    Parallel
  • Organization
    256KX36
  • Output Characteristics
    3-STATE
  • Memory Width
    36
  • Address Bus Width
    18b
  • Density
    9 Mb
  • Standby Current-Max
    0.05A
  • I/O Type
    COMMON
  • Sync/Async
    Synchronous
  • Word Size
    36b
  • Standby Voltage-Min
    2.38V
  • Height Seated (Max)
    1.6mm
  • Length
    20mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
IS61NVP25636A-200TQLI Overview
Our product boasts a highly efficient and advanced pipelined architecture, allowing for seamless execution of tasks. With a single function, it offers simplicity and ease of use. Operating at a supply voltage of 2.5V, it ensures low power consumption while maintaining optimal performance. The maximum time required for reflow at peak temperature is just 40 seconds, making it a time-saving solution. With a memory size of 9Mb, consisting of 256K x 36, it provides ample storage capacity. Running at a clock frequency of 200MHz, it delivers fast processing speeds. The memory width of 36 and address bus width of 18b further enhance its efficiency. Measuring at a maximum height of 1.6mm, it is compact and space-saving. Furthermore, it is ROHS3 compliant, meeting international standards for environmental safety.

IS61NVP25636A-200TQLI Features
Package / Case: 100-LQFP
100 Pins
Operating Supply Voltage:2.5V
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: COMMON


IS61NVP25636A-200TQLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61NVP25636A-200TQLI Memory applications.


mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
IS61NVP25636A-200TQLI More Descriptions
8Mb, "No-Wait"/Pipeline, Sync, 256K x 36, 200Mhz, 2.5v I/O, 100 Pin TQFP, RoHS
Memory - SRAM, "No-Wait", Pipeline, Synchronous 8Mb,256Kx36,200Mhz, 2.5v I/O
SRAM Chip Sync Quad 2.5V 9M-Bit 256K x 36 3.1ns 100-Pin TQFP
2.375V~2.625V 9Mbit TQFP-100(14x20) SRAM ROHS
IC SRAM 9MBIT PARALLEL 100TQFP
Product Comparison
The three parts on the right have similar specifications to IS61NVP25636A-200TQLI.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Number of Ports
    Nominal Supply Current
    Memory Type
    Clock Frequency
    Access Time
    Memory Format
    Memory Interface
    Organization
    Output Characteristics
    Memory Width
    Address Bus Width
    Density
    Standby Current-Max
    I/O Type
    Sync/Async
    Word Size
    Standby Voltage-Min
    Height Seated (Max)
    Length
    Radiation Hardening
    RoHS Status
    HTS Code
    Memory Density
    Access Time (Max)
    Width
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Interface
    Max Supply Voltage
    Min Supply Voltage
    Write Cycle Time - Word, Page
    Reach Compliance Code
    JESD-30 Code
    View Compare
  • IS61NVP25636A-200TQLI
    IS61NVP25636A-200TQLI
    12 Weeks
    Surface Mount
    100-LQFP
    YES
    100
    -40°C~85°C TA
    Tray
    e3
    yes
    Active
    2 (1 Year)
    100
    3A991.B.2.A
    Matte Tin (Sn) - annealed
    PIPELINED ARCHITECTURE
    SRAM - Synchronous, SDR
    2.375V~2.625V
    QUAD
    260
    1
    2.5V
    0.65mm
    40
    100
    2.5V
    2.625V
    2.375V
    9Mb 256K x 36
    4
    280mA
    Volatile
    200MHz
    3.1ns
    SRAM
    Parallel
    256KX36
    3-STATE
    36
    18b
    9 Mb
    0.05A
    COMMON
    Synchronous
    36b
    2.38V
    1.6mm
    20mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IS61DDB24M18A-300M3L
    12 Weeks
    Surface Mount
    165-LBGA
    YES
    165
    0°C~70°C TA
    Tray
    -
    -
    Active
    3 (168 Hours)
    165
    3A991.B.2.A
    -
    PIPELINED ARCHITECTURE
    SRAM - Synchronous, DDR II
    1.71V~1.89V
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    1mm
    NOT SPECIFIED
    165
    -
    1.89V
    1.71V
    72Mb 4M x 18
    -
    -
    Volatile
    300MHz
    -
    SRAM
    Parallel
    4MX18
    -
    18
    -
    -
    -
    -
    -
    -
    -
    1.4mm
    17mm
    -
    ROHS3 Compliant
    8542.32.00.41
    75497472 bit
    0.45 ns
    15mm
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IS61C25616AL-10KLI-TR
    8 Weeks
    Surface Mount
    44-BSOJ (0.400, 10.16mm Width)
    -
    44
    -40°C~85°C TA
    Tape & Reel (TR)
    -
    -
    Active
    2 (1 Year)
    -
    -
    -
    -
    SRAM - Asynchronous
    4.5V~5.5V
    -
    -
    -
    -
    -
    -
    -
    5V
    -
    -
    4Mb 256K x 16
    1
    50mA
    Volatile
    -
    10ns
    SRAM
    Parallel
    -
    -
    -
    18b
    4 Mb
    -
    -
    Asynchronous
    16b
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    44-SOJ
    85°C
    -40°C
    Parallel
    5.5V
    4.5V
    10ns
    -
    -
  • IS61DDB44M18A-300M3I
    -
    Surface Mount
    165-LBGA
    YES
    -
    -40°C~85°C TA
    Tray
    -
    -
    Last Time Buy
    3 (168 Hours)
    165
    3A991.B.2.A
    -
    PIPELINED ARCHITECTURE
    SRAM - Synchronous, DDR II
    1.71V~1.89V
    BOTTOM
    -
    1
    1.8V
    1mm
    -
    165
    -
    1.89V
    1.71V
    72Mb 4M x 18
    -
    -
    Volatile
    300MHz
    1.48ns
    SRAM
    Parallel
    4MX18
    -
    18
    -
    -
    -
    -
    -
    -
    -
    1.4mm
    17mm
    -
    -
    8542.32.00.41
    75497472 bit
    -
    15mm
    -
    -
    -
    -
    -
    -
    -
    compliant
    R-PBGA-B165
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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