Part Number: IS64LF12832EC-7.5TQLA3-TR vs IS64WV5128EDBLL-10BLA3-TR

Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product!
Part Number: IS64LF12832EC-7.5TQLA3-TR IS64WV5128EDBLL-10BLA3-TR
Manufacturer: ISSI, Integrated Silicon Solution Inc ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 4MBIT 7.5NS 100TQFP 2.5/3.3V V Memory IC 8mm mm
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 12 Weeks 10 Weeks
Mounting Type Surface Mount Surface Mount
Package / Case 100-LQFP 36-TFBGA
Number of Pins 100 36
Operating Temperature -40°C~125°C TA -40°C~125°C TA
Packaging Tape & Reel (TR) Tape & Reel (TR)
Part Status Active Active
Moisture Sensitivity Level (MSL) 3 (168 Hours) 3 (168 Hours)
Technology SRAM - Synchronous, SDR SRAM - Asynchronous
Voltage - Supply 3.135V~3.465V 2.4V~3.6V
Memory Size 4Mb 128K x 32 4Mb 512K x 8
Memory Type Volatile Volatile
Access Time 7.5ns -
Memory Format SRAM SRAM
Memory Interface Parallel Parallel
Max Frequency 117MHz -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Surface Mount - YES
JESD-609 Code - e3
Pbfree Code - yes
Number of Terminations - 36
Terminal Finish - MATTE TIN
Terminal Position - BOTTOM
Peak Reflow Temperature (Cel) - 225
Number of Functions - 1
Supply Voltage - 3V
Terminal Pitch - 0.75mm
Time@Peak Reflow Temperature-Max (s) - NOT SPECIFIED
Qualification Status - Not Qualified
Supply Voltage-Max (Vsup) - 3.6V
Power Supplies - 2.5/3.3V
Supply Voltage-Min (Vsup) - 2.4V
Supply Current-Max - 0.065mA
Organization - 512KX8
Output Characteristics - 3-STATE
Memory Width - 8
Write Cycle Time - Word, Page - 10ns
Standby Current-Max - 0.015A
Memory Density - 4194304 bit
Screening Level - AEC-Q100
Access Time (Max) - 10 ns
I/O Type - COMMON
Standby Voltage-Min - 2V
Length - 8mm
Height Seated (Max) - 1.2mm
Width - 6mm
Submit RFQ: Submit Submit