| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
TH58BVG3S0HTA00 |
TH58NYG2S3HBAI6 |
| Manufacturer: |
Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage |
| Description: |
IC EEPROM 4GBIT 25NS 48TSOP |
Memory IC |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
48-TFSOP (0.724, 18.40mm Width) |
63-BGA |
| Surface Mount |
YES |
- |
| Operating Temperature |
0°C~70°C TA |
-40°C~85°C TA |
| Packaging |
Tray |
Tray |
| Series |
Benand™ |
- |
| Part Status |
Active |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
3 (168 Hours) |
| Number of Terminations |
48 |
- |
| Technology |
FLASH - NAND (SLC) |
FLASH - NAND (SLC) |
| Voltage - Supply |
2.7V~3.6V |
1.7V~1.95V |
| Terminal Position |
DUAL |
- |
| Number of Functions |
1 |
- |
| Supply Voltage |
3.3V |
- |
| Terminal Pitch |
0.5mm |
- |
| JESD-30 Code |
R-PDSO-G48 |
- |
| Supply Voltage-Max (Vsup) |
3.6V |
- |
| Supply Voltage-Min (Vsup) |
2.7V |
- |
| Memory Size |
8Gb 1G x 8 |
4Gb 512M x 8 |
| Memory Type |
Non-Volatile |
Non-Volatile |
| Operating Mode |
ASYNCHRONOUS |
- |
| Memory Format |
FLASH |
FLASH |
| Memory Interface |
Parallel |
Parallel |
| Organization |
1GX8 |
- |
| Memory Width |
8 |
- |
| Write Cycle Time - Word, Page |
25ns |
25ns |
| Memory Density |
8589934592 bit |
- |
| Programming Voltage |
3.3V |
- |
| Height Seated (Max) |
1.2mm |
- |
| Length |
18.4mm |
- |
| Width |
12mm |
- |
| RoHS Status |
RoHS Compliant |
RoHS Compliant |
| Submit RFQ: |
Submit |
Submit |
