| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
DMN4020LFDE-13 |
DMN4027SSS-13 |
| Manufacturer: |
Diodes Incorporated |
Diodes Incorporated |
| Description: |
MOSFET N-CH 40V 8A U-DFN2020-6 |
MOSFET N-CH 40V 6A 8SO |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Factory Lead Time |
22 Weeks |
- |
| Mount |
Surface Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
6-UDFN Exposed Pad |
8-SOIC (0.154, 3.90mm Width) |
| Operating Temperature |
-55°C~150°C TJ |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Published |
2012 |
2010 |
| JESD-609 Code |
e4 |
e3 |
| Part Status |
Active |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
EAR99 |
| Terminal Finish |
Nickel/Palladium/Gold (Ni/Pd/Au) |
Matte Tin (Sn) |
| Technology |
MOSFET (Metal Oxide) |
MOSFET (Metal Oxide) |
| Power Dissipation-Max |
660mW Ta |
1.56W Ta |
| Turn On Delay Time |
5.3 ns |
3.1 ns |
| FET Type |
N-Channel |
N-Channel |
| Rds On (Max) @ Id, Vgs |
20m Ω @ 8A, 10V |
27m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1060pF @ 20V |
604pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C |
8A Ta |
6A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
19.1nC @ 20V |
12.9nC @ 10V |
| Rise Time |
7.1ns |
3.1ns |
| Drain to Source Voltage (Vdss) |
40V |
- |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
4.5V 10V |
| Vgs (Max) |
±20V |
±20V |
| Fall Time (Typ) |
4.8 ns |
7.5 ns |
| Turn-Off Delay Time |
15.1 ns |
15.4 ns |
| Continuous Drain Current (ID) |
8A |
6A |
| Gate to Source Voltage (Vgs) |
20V |
20V |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Number of Pins |
- |
8 |
| Weight |
- |
73.992255mg |
| Transistor Element Material |
- |
SILICON |
| Pbfree Code |
- |
yes |
| Number of Terminations |
- |
8 |
| Additional Feature |
- |
HIGH RELIABILITY |
| Subcategory |
- |
FET General Purpose Powers |
| Terminal Form |
- |
GULL WING |
| Peak Reflow Temperature (Cel) |
- |
260 |
| Time@Peak Reflow Temperature-Max (s) |
- |
40 |
| Pin Count |
- |
8 |
| Number of Elements |
- |
1 |
| Number of Channels |
- |
2 |
| Element Configuration |
- |
Dual |
| Operating Mode |
- |
ENHANCEMENT MODE |
| Power Dissipation |
- |
2.8W |
| Transistor Application |
- |
SWITCHING |
| Drain Current-Max (Abs) (ID) |
- |
6A |
| Drain to Source Breakdown Voltage |
- |
40V |
| Radiation Hardening |
- |
No |
| Submit RFQ: |
Submit |
Submit |
