Toshiba Semiconductor and Storage 2SK209-GR(TE85L,F)
- Part Number:
- 2SK209-GR(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 3585801-2SK209-GR(TE85L,F)
- Description:
- JFET N-CH SOT23
- Datasheet:
- 2SK209-GR(TE85L,F)
Toshiba Semiconductor and Storage 2SK209-GR(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SK209-GR(TE85L,F).
- Factory Lead Time52 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- PackagingCut Tape (CT)
- Published2009
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Max Operating Temperature125°C
- Min Operating Temperature-55°C
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Frequency1kHz
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeDEPLETION MODE
- Current - Test500μA
- Transistor ApplicationAMPLIFIER
- Transistor TypeN-Channel JFET
- Continuous Drain Current (ID)6.5mA
- Gate to Source Voltage (Vgs)-1.5V
- FET TechnologyJUNCTION
- Noise Figure1dB
- Voltage - Test10V
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
2SK209-GR(TE85L,F) Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet 2SK209-GR(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of 2SK209-GR(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet 2SK209-GR(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of 2SK209-GR(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
2SK209-GR(TE85L,F) More Descriptions
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236
Trans JFET N-CH 6.5mA Si 3-Pin S-Mini T/R
JFET N-Ch Junction FET 10mA -50V VGDS
Transistor, JFET, 50V, 0.15W, TO-236;
MOSFET JFET (3MA 50V (VGDS) N-CH)
IC HOT SWAP CTRLR -48V SOT23-6
JFET, N-CH, 1.5V, 0.014A, TO-236; Gate Source Breakdown Voltage Max:50V; Zero Gate Voltage Drain Current Max:14mA; Gate Source Cutoff Voltage Max:1.5V; No. of Pins:3 Pin; Operating Temperature Max:125°C; Channel Type:N Channel RoHS Compliant: Yes
Trans JFET N-CH 6.5mA Si 3-Pin S-Mini T/R
JFET N-Ch Junction FET 10mA -50V VGDS
Transistor, JFET, 50V, 0.15W, TO-236;
MOSFET JFET (3MA 50V (VGDS) N-CH)
IC HOT SWAP CTRLR -48V SOT23-6
JFET, N-CH, 1.5V, 0.014A, TO-236; Gate Source Breakdown Voltage Max:50V; Zero Gate Voltage Drain Current Max:14mA; Gate Source Cutoff Voltage Max:1.5V; No. of Pins:3 Pin; Operating Temperature Max:125°C; Channel Type:N Channel RoHS Compliant: Yes
The three parts on the right have similar specifications to 2SK209-GR(TE85L,F).
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountPackage / CaseNumber of PinsPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsMax Operating TemperatureMin Operating TemperatureMax Power DissipationTerminal PositionTerminal FormFrequencyNumber of ElementsElement ConfigurationOperating ModeCurrent - TestTransistor ApplicationTransistor TypeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)FET TechnologyNoise FigureVoltage - TestRadiation HardeningRoHS Statusregion:Shipment :Packaging:Distributor:Contact Email:Condition:Mounting TypeTransistor Element MaterialOperating TemperatureJESD-609 CodeECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountPower Dissipation-MaxPower DissipationCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageLead FreeView Compare
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2SK209-GR(TE85L,F)52 WeeksCopper, Silver, TinSurface MountTO-236-3, SC-59, SOT-23-33Cut Tape (CT)2009Active1 (Unlimited)3125°C-55°C150mWDUALGULL WING1kHz1SingleDEPLETION MODE500μAAMPLIFIERN-Channel JFET6.5mA-1.5VJUNCTION1dB10VNoRoHS Compliant---------------------------------------
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-----------------------------hkDHLSOT343Ventronsales@ventronchip.comNew--------------------------------
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-----Tape & Reel (TR)-Obsolete1 (Unlimited)----------------------------------------------------------
-
7 Weeks-Surface MountTO-243AA3Tape & Reel (TR)1998Not For New Designs1 (Unlimited)3----FLAT-1SingleENHANCEMENT MODE-SWITCHING-2A20V---NoROHS3 Compliant------Surface MountSILICON150°C TJe2EAR99TIN COPPER8541.21.00.95FET General Purpose Power30VMOSFET (Metal Oxide)2602A103500mW Ta2WDRAIN10 nsN-Channel400m Ω @ 1A, 10V2.5V @ 1mA230pF @ 10V2A Ta25ns4V 10V±20V60 ns60 ns2A0.6Ohm30VLead Free
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