2SK209-GR(TE85L,F)

Toshiba Semiconductor and Storage 2SK209-GR(TE85L,F)

Part Number:
2SK209-GR(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Ventron No:
3585801-2SK209-GR(TE85L,F)
Description:
JFET N-CH SOT23
ECAD Model:
Datasheet:
2SK209-GR(TE85L,F)

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Specifications
Toshiba Semiconductor and Storage 2SK209-GR(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SK209-GR(TE85L,F).
  • Factory Lead Time
    52 Weeks
  • Contact Plating
    Copper, Silver, Tin
  • Mount
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Packaging
    Cut Tape (CT)
  • Published
    2009
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Max Operating Temperature
    125°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    150mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Frequency
    1kHz
  • Number of Elements
    1
  • Element Configuration
    Single
  • Operating Mode
    DEPLETION MODE
  • Current - Test
    500μA
  • Transistor Application
    AMPLIFIER
  • Transistor Type
    N-Channel JFET
  • Continuous Drain Current (ID)
    6.5mA
  • Gate to Source Voltage (Vgs)
    -1.5V
  • FET Technology
    JUNCTION
  • Noise Figure
    1dB
  • Voltage - Test
    10V
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
2SK209-GR(TE85L,F) Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet 2SK209-GR(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of 2SK209-GR(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
2SK209-GR(TE85L,F) More Descriptions
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236
Trans JFET N-CH 6.5mA Si 3-Pin S-Mini T/R
JFET N-Ch Junction FET 10mA -50V VGDS
Transistor, JFET, 50V, 0.15W, TO-236;
MOSFET JFET (3MA 50V (VGDS) N-CH)
IC HOT SWAP CTRLR -48V SOT23-6
JFET, N-CH, 1.5V, 0.014A, TO-236; Gate Source Breakdown Voltage Max:50V; Zero Gate Voltage Drain Current Max:14mA; Gate Source Cutoff Voltage Max:1.5V; No. of Pins:3 Pin; Operating Temperature Max:125°C; Channel Type:N Channel RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to 2SK209-GR(TE85L,F).
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Package / Case
    Number of Pins
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Frequency
    Number of Elements
    Element Configuration
    Operating Mode
    Current - Test
    Transistor Application
    Transistor Type
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    FET Technology
    Noise Figure
    Voltage - Test
    Radiation Hardening
    RoHS Status
    region:
    Shipment :
    Packaging:
    Distributor:
    Contact Email:
    Condition:
    Mounting Type
    Transistor Element Material
    Operating Temperature
    JESD-609 Code
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Power Dissipation-Max
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Lead Free
    View Compare
  • 2SK209-GR(TE85L,F)
    2SK209-GR(TE85L,F)
    52 Weeks
    Copper, Silver, Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    Cut Tape (CT)
    2009
    Active
    1 (Unlimited)
    3
    125°C
    -55°C
    150mW
    DUAL
    GULL WING
    1kHz
    1
    Single
    DEPLETION MODE
    500μA
    AMPLIFIER
    N-Channel JFET
    6.5mA
    -1.5V
    JUNCTION
    1dB
    10V
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
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  • 2SK2685ZT-TR
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    hk
    DHL
    SOT343
    Ventron
    sales@ventronchip.com
    New
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  • 2SK2394-7-FRD-TB-E
    -
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
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  • 2SK2103T100
    7 Weeks
    -
    Surface Mount
    TO-243AA
    3
    Tape & Reel (TR)
    1998
    Not For New Designs
    1 (Unlimited)
    3
    -
    -
    -
    -
    FLAT
    -
    1
    Single
    ENHANCEMENT MODE
    -
    SWITCHING
    -
    2A
    20V
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    Surface Mount
    SILICON
    150°C TJ
    e2
    EAR99
    TIN COPPER
    8541.21.00.95
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    260
    2A
    10
    3
    500mW Ta
    2W
    DRAIN
    10 ns
    N-Channel
    400m Ω @ 1A, 10V
    2.5V @ 1mA
    230pF @ 10V
    2A Ta
    25ns
    4V 10V
    ±20V
    60 ns
    60 ns
    2A
    0.6Ohm
    30V
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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