SANYO 2SC6082 technical specifications, attributes, parameters and parts with similar specifications to SANYO 2SC6082.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Supplier Device PackageTO-220ML
- Operating Temperature150°C TJ
- PackagingBulk
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max2W
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 330mA 2V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 375mA, 7.5A
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)15A
- Frequency - Transition195MHz
- RoHS StatusROHS3 Compliant
2SC6082 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 330mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2SC6082 Features
the DC current gain for this device is 200 @ 330mA 2V
the vce saturation(Max) is 400mV @ 375mA, 7.5A
the supplier device package of TO-220ML
2SC6082 Applications
There are a lot of Rochester Electronics, LLC
2SC6082 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 330mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2SC6082 Features
the DC current gain for this device is 200 @ 330mA 2V
the vce saturation(Max) is 400mV @ 375mA, 7.5A
the supplier device package of TO-220ML
2SC6082 Applications
There are a lot of Rochester Electronics, LLC
2SC6082 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC6082 More Descriptions
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 330mA 2V 10muA ICBO 2W 195MHz
Bipolar Transistor, 50 V, 15 A, Low VCE(sat), NPN TO-220F-3SG
Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 50V 15A 3-Pin(3 Tab) TO-220ML
TRANSISTOR, NPN, 50V, 15A, TO-220ML; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:50V; Gain Bandwidth ft Typ:195MHz; Power Dissipation Pd:25W; DC Collector Current:15A; DC Current Gain hFE:560; Transistor Case ;RoHS Compliant: Yes
Bipolar Transistor, 50 V, 15 A, Low VCE(sat), NPN TO-220F-3SG
Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 50V 15A 3-Pin(3 Tab) TO-220ML
TRANSISTOR, NPN, 50V, 15A, TO-220ML; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:50V; Gain Bandwidth ft Typ:195MHz; Power Dissipation Pd:25W; DC Collector Current:15A; DC Current Gain hFE:560; Transistor Case ;RoHS Compliant: Yes
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