Rohm Semiconductor 2SB1236TV2R
- Part Number:
- 2SB1236TV2R
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2466995-2SB1236TV2R
- Description:
- TRANS PNP 120V 1.5A ATV
- Datasheet:
- 2SB1236
Rohm Semiconductor 2SB1236TV2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SB1236TV2R.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case3-SIP
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2004
- JESD-609 Codee1
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- SubcategoryOther Transistors
- Voltage - Rated DC-120V
- Max Power Dissipation1W
- Peak Reflow Temperature (Cel)260
- Current Rating-1.5A
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)2V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA 5V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic2V @ 100mA, 1A
- Collector Emitter Breakdown Voltage120V
- Current - Collector (Ic) (Max)1.5A
- Transition Frequency50MHz
- Collector Base Voltage (VCBO)-120V
- Emitter Base Voltage (VEBO)5V
- hFE Min180
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SB1236TV2R Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1.5A.A transition frequency of 50MHz is present in the part.Collector current can be as low as 1.5A volts at its maximum.
2SB1236TV2R Features
the DC current gain for this device is 180 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
2SB1236TV2R Applications
There are a lot of ROHM Semiconductor
2SB1236TV2R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1.5A.A transition frequency of 50MHz is present in the part.Collector current can be as low as 1.5A volts at its maximum.
2SB1236TV2R Features
the DC current gain for this device is 180 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
2SB1236TV2R Applications
There are a lot of ROHM Semiconductor
2SB1236TV2R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SB1236TV2R More Descriptions
Transistor GP BJT PNP 120V 1.5A 3-Pin ATV
Compliant Through Hole 180 PNP Lead Free -1.5 A -120 V 50 MHz
TRANS PNP 120V 1.5A ATV
IC OPAMP GP 2 CIRCUIT 8UMAX
Compliant Through Hole 180 PNP Lead Free -1.5 A -120 V 50 MHz
TRANS PNP 120V 1.5A ATV
IC OPAMP GP 2 CIRCUIT 8UMAX
The three parts on the right have similar specifications to 2SB1236TV2R.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeLifecycle StatusFactory Lead TimeContact PlatingSurface MountNumber of PinsPbfree CodeMax FrequencyCollector Emitter Saturation VoltageFrequency - TransitionHeightLengthWidthAdditional FeatureTerminal PositionReach Compliance CodeConfigurationCase ConnectionPower - MaxJEDEC-95 CodeSupplier Device PackageBase Part NumberVoltage - Collector Emitter Breakdown (Max)Max Breakdown VoltageView Compare
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2SB1236TV2RThrough HoleThrough Hole3-SIPSILICON150°C TJTape & Box (TB)2004e1Obsolete1 (Unlimited)3EAR99TIN SILVER COPPEROther Transistors-120V1W260-1.5A103R-PSIP-T3Not Qualified1SingleSWITCHING50MHzPNPPNP2V1.5A180 @ 100mA 5V1μA ICBO2V @ 100mA, 1A120V1.5A50MHz-120V5V180ROHS3 CompliantLead Free------------------------
-
-Surface MountTO-243AA-150°C TJTape & Reel (TR)2010e6Active1 (Unlimited)-EAR99-Other Transistors-500mWNOT SPECIFIED-NOT SPECIFIED3---Single--PNPPNP500mV1A100 @ 100mA 2V100nA ICBO500mV @ 50mA, 500mA50V---60V-5V-ROHS3 CompliantLead FreeACTIVE (Last Updated: 4 days ago)2 WeeksTinYES3yes150MHz-500mV150MHz1.5mm4.5mm2.5mm-----------
-
Through HoleThrough HoleTO-220-3 Full PackSILICON150°C TJBulk2007-Active1 (Unlimited)3EAR99-Other Transistors-25WNOT SPECIFIED-NOT SPECIFIED3R-PSFM-T3Not Qualified1-SWITCHING-PNPPNP - Darlington1.5V4A2000 @ 3A 4V10μA ICBO1.5V @ 6mA, 3A60V-200MHz---RoHS CompliantLead Free-12 Weeks---yes--150MHz---BUILT IN BIAS RESISTANCE RATIO IS 0.325SINGLEunknownSINGLEISOLATED25WTO-220AB----
-
Surface MountSurface MountSC-85-150°C TJTape & Reel (TR)2007-Obsolete1 (Unlimited)-----150mW-----------PNP600mV500mA170 @ 150mA 10V100nA ICBO600mV @ 30mA, 300mA50V500mA----RoHS Compliant-----85---200MHz--------150mW-SMini3-F22SB121950V50V
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