Rohm Semiconductor 2SAR293P5T100

Name: 2SAR293P5T100
Brand: Rohm Semiconductor
SKU: 2845811-2SAR293P5T100
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2SAR293P5T100

Manufacturer:: Rohm Semiconductor

Ventron No:: 2845811-2SAR293P5T100

Description:: PNP MIDDLE POWER DRIVER TRANSIST

ECAD Model:

Datasheet:: 2SAR293P5T100

Specifications

Rohm Semiconductor 2SAR293P5T100 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SAR293P5T100.

Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
500mW
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
500mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
350mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
320MHz
Max Breakdown Voltage
30V
Frequency - Transition
320MHz
RoHS Status
ROHS3 Compliant

Description

2SAR293P5T100 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 100mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 25mA, 500mA.A transition frequency of 320MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 1A volts at its maximum.

2SAR293P5T100 Features
the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 350mV @ 25mA, 500mA
a transition frequency of 320MHz

2SAR293P5T100 Applications
There are a lot of ROHM Semiconductor
2SAR293P5T100 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2SAR293P5T100 More Descriptions

Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
PNP Middle Power Driver Transistor (-30V / -1.0A), MPT3, SOT-89Avnet Japan
2SAR293P5 Series 30 V 1 A 0.5 W SMT PNP Power Transistor - MPT3 (SC-62)
Trans GP BJT PNP 30V 1A 2000mW 4-Pin(3 Tab) MPT T/R
TRANS, PNP, -30V, -1A, 150DEG C, 0.5W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -30V; Transition Frequency ft: -; Power Dissipation Pd: 500mW; DC Collector Current: -1A; DC Current Gain hFE: 270hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Certification