2N6039G

ON Semiconductor 2N6039G

Part Number:
2N6039G
Manufacturer:
ON Semiconductor
Ventron No:
2845230-2N6039G
Description:
TRANS NPN DARL 80V 4A TO225AA
ECAD Model:
Datasheet:
2N6039G

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Specifications
ON Semiconductor 2N6039G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6039G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    80V
  • Max Power Dissipation
    40W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    4A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    2N6039
  • Pin Count
    3
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    40W
  • Transistor Application
    AMPLIFIER
  • Halogen Free
    Halogen Free
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    4A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 2A 3V
  • Current - Collector Cutoff (Max)
    100μA
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 40mA, 4A
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    25MHz
  • Collector Emitter Saturation Voltage
    2V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    5V
  • Continuous Collector Current
    4A
  • Height
    2.66mm
  • Length
    11.04mm
  • Width
    7.74mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N6039G Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).25MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

2N6039G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz


2N6039G Applications
There are a lot of ON Semiconductor
2N6039G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N6039G More Descriptions
4.0 A, 80 V NPN Darlington Bipolar Power Transistor
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 80V 4A 40000mW 3-Pin(3 Tab) TO-225 Box
2N Series 80 V 4 A Darlington Complementary Silicon Power Transistor - TO-225AA
ON Semi 2N6039G NPN Darlington Transistor, 4 A 80 V HFE:100, 3-Pin TO-225AA | ON Semiconductor 2N6039G
TRANSISTOR, NPN, 80V, 4A, TO-225; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80VDC; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Col; Available until stocks are exhausted Alternative available
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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