ON Semiconductor 2N6039G
- Part Number:
- 2N6039G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845230-2N6039G
- Description:
- TRANS NPN DARL 80V 4A TO225AA
- Datasheet:
- 2N6039G
ON Semiconductor 2N6039G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6039G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)260
- Current Rating4A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N6039
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation40W
- Transistor ApplicationAMPLIFIER
- Halogen FreeHalogen Free
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A 3V
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency25MHz
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current4A
- Height2.66mm
- Length11.04mm
- Width7.74mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N6039G Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).25MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2N6039G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6039G Applications
There are a lot of ON Semiconductor
2N6039G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).25MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2N6039G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6039G Applications
There are a lot of ON Semiconductor
2N6039G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6039G More Descriptions
4.0 A, 80 V NPN Darlington Bipolar Power Transistor
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 80V 4A 40000mW 3-Pin(3 Tab) TO-225 Box
2N Series 80 V 4 A Darlington Complementary Silicon Power Transistor - TO-225AA
ON Semi 2N6039G NPN Darlington Transistor, 4 A 80 V HFE:100, 3-Pin TO-225AA | ON Semiconductor 2N6039G
TRANSISTOR, NPN, 80V, 4A, TO-225; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80VDC; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Col; Available until stocks are exhausted Alternative available
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 80V 4A 40000mW 3-Pin(3 Tab) TO-225 Box
2N Series 80 V 4 A Darlington Complementary Silicon Power Transistor - TO-225AA
ON Semi 2N6039G NPN Darlington Transistor, 4 A 80 V HFE:100, 3-Pin TO-225AA | ON Semiconductor 2N6039G
TRANSISTOR, NPN, 80V, 4A, TO-225; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80VDC; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Col; Available until stocks are exhausted Alternative available
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